公开(公告)号：US12237410B1

公开(公告)日：2025-02-25

申请号：US18937369

申请日：2024-11-05

Applicant: JSAB TECHNOLOGIES (SHENZHEN) LTD.

Inventor： Yong Liu ,  Hao Feng ,  Xin Peng ,  Johnny Kin On Sin

IPC: H01L29/78 ,  H01L21/04 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66

Abstract: A trench gate silicon carbide metal oxide semiconductor field effect transistor (MOSFET) device and a fabrication method thereof. A second conductive heavily doped layer at the bottom corner of a trench gate is electrically connected to a second conductive heavily doped layer on another side edge of the trench gate through a layout design, which ensures a ground potential during voltage blocking state. This design protects the insulating layer in the trench gate and the Schottky contact in a junction barrier Schottky (JBS) diode, thereby enhancing device reliability. Moreover, in a diode operating mode, P+ on the left and right sides of the trench gate are connected to a positive potential. When the P+/N− junction is activated, the conductivity modulation can be implemented through hole injection, thereby improving the device's ability to withstand surge current impacts.