公开(公告)号：US20020008246A1

公开(公告)日：2002-01-24

申请号：US09862017

申请日：2001-05-21

Applicant: International Rectifier Corp.

Inventor： Richard Francis ,  Chiu Ng

IPC: H01L029/861

CPC classification number: H01L29/66136 ,  H01L29/0619 ,  H01L29/32 ,  H01L29/872 ,  Y10S257/91

Abstract: A soft recovery diode is made by first implanting helium into the die to a location below the P/N junction and the implant annealed. An E-beam radiation process then is applied to the entire wafer and is also annealed. The diode then has very soft recovery characteristics without requiring heavy metal doping.

Abstract translation: 软恢复二极管通过首先将氦注入管芯到位于P / N结下方的位置并进行退火而制成。 然后将电子束辐射过程施加到整个晶片并且也被退火。 二极管然后具有非常柔软的恢复特性，而不需要重金属掺杂。

公开(公告)号：US20030201454A1

公开(公告)日：2003-10-30

申请号：US10132549

申请日：2002-04-25

Applicant: International Rectifier Corp.

Inventor： Richard Francis ,  Chiu Ng

IPC: H01L029/74

CPC classification number: H01L29/7397 ,  H01L29/0834 ,  H01L29/1095

Abstract: An IGBT has parallel spaced trenches lined with gate oxide and filled with conductive polysilicon gate bodies. The trenches extend through a Pnull base region which is about 7 microns deep. A deep narrow Nnull emitter diffusion is at the top of the trench and a shallow Pnull contact diffusion extends between adjacent emitter diffusions. The Nnull emitter diffusions are arranged to define a minimum RBnull. The trenches are sufficiently deep to define long channel regions which can withstand a substantial portion of the blocking voltage of the device. A second blanket emitter implant and diffusion defines a shallow high concentration emitter diffusion extension at the top of the die for improved contact to the emitter diffusions.

Abstract translation: IGBT具有与栅极氧化物排列并且填充有导电多晶硅栅极体的平行隔开的沟槽。 沟槽延伸穿过大约7微米深的P'基底区域。 深沟N +发射体扩散在沟槽的顶部，浅的P +接触扩散在相邻的发射极扩散之间延伸。 N +发射极扩散布置成限定最小RB'。 沟槽足够深以限定可以承受器件的大部分阻断电压的长通道区域。 第二个覆盖发射器的注入和扩散在芯片的顶部限定了一个浅的高浓度发射极扩散延伸，以改善与发射极扩散的接触。