公开(公告)号：US20010041400A1

公开(公告)日：2001-11-15

申请号：US09852579

申请日：2001-05-10

Applicant: International Rectifier Corp.

Inventor： Lipping Ren ,  Srikant Sridevan

IPC: H01L021/8238

CPC classification number: H01L29/7802 ,  H01L21/26586 ,  H01L21/76237 ,  H01L29/0634

Abstract: A process is described for making a superjunction semiconductor device. a large number of symmetrically spaced trenches penetrate the Nnull epitaxial layer of silicon atop an Nnull body to a depth of 35 to 40 microns. The wells have a circular cross-section and a diameter of about 9 microns. The trench walls are implanted by an ion implant beam of boron which is at a slight angle to the axis of the trenches. The wafer is intermittently or continuously rotated about an axis less than 90null to its surface to cause skewing of the implant beam and more uniform distribution of boron ions over the interior surfaces of the trenches.

Abstract translation: 描述了制造超结半导体器件的工艺。 大量对称间隔开的沟槽将N +体顶上的硅的N-外延层穿透至35至40微米的深度。 孔具有圆形横截面和约9微米的直径。 通过与沟槽轴线成微小角度的离子注入硼硼注入沟壁。 晶片围绕其表面小于90°的轴线间断地或连续地旋转，以引起注入光束的偏斜和硼离子在沟槽的内表面上的更均匀的分布。