公开(公告)号：US20220359401A1

公开(公告)日：2022-11-10

申请号：US17315859

申请日：2021-05-10

Applicant: International Business Machines Corporation

Inventor： Kamal K. Sikka ,  Maryse Cournoyer ,  Pascale Gagnon ,  Charles C. Bureau ,  Catherine Dufort ,  Dale Curtis McHerron ,  Vijayeshwar Das Khanna ,  Marc A. Bergendahl ,  Dishit Paresh Parekh ,  RAVI K. BONAM ,  HIROYUKI MORI ,  Yang Liu ,  Paul S. Andry ,  Isabel De Sousa

IPC: H01L23/538 ,  H01L23/00 ,  H01L25/065 ,  H01L23/13 ,  H01L21/48

Abstract: A direct bonded heterogeneous integration (DBHi) device includes a substrate including a trench formed in a top surface of the substrate. The DBHi device further includes a first chip coupled to the substrate on a first side of the trench by a plurality of first interconnects. The DBHi device further includes a second chip coupled to the substrate on a second side of the trench by a plurality of second interconnects. The second side of the trench is arranged opposite the first side of the trench. The DBHi device further includes a bridge coupled to the first chip and to the second chip by a plurality of third interconnects such that the bridge is suspended in the trench. The DBHi device further includes a non-conductive paste material surrounding the plurality of third interconnects to further couple the bridge to the first chip and to the second chip.

公开(公告)号：US20220357648A1

公开(公告)日：2022-11-10

申请号：US17814249

申请日：2022-07-22

Applicant: International Business Machines Corporation

Inventor： RAVI K. BONAM ,  GANGADHARA RAJA MUTHINTI

IPC: G03F1/36 ,  G03F7/20 ,  G01B11/02 ,  H01L21/66

Abstract: A computer-implemented method for determining optical roughness in a semiconductor pattern structure that includes receiving, using a processor, optical responses spectra collected from the semiconductor pattern structure and constructing, using the processor optical critical dimension (OCD) models by using a set of input parameters for each layer of the semiconductor pattern structure. The method further includes calculating, using the processor, theoretical optical responses from a theoretical input generated by the OCD models. In addition, the method provides for comparing, using the processor, the optical responses spectra of the semiconductor pattern structure to the theoretical optical responses to determine output parameters for the optical roughness of the semiconductor pattern structure.

公开(公告)号：US20200301268A1

公开(公告)日：2020-09-24

申请号：US16361843

申请日：2019-03-22

Applicant: International Business Machines Corporation

Inventor： RAVI K. BONAM ,  GANGADHARA RAJA MUTHINTI

IPC: G03F1/36 ,  H01L21/66 ,  G01B11/02 ,  G03F7/20

Abstract: A computer-implemented method for determining optical roughness in a semiconductor pattern structure that includes receiving, using a processor, optical responses spectra collected from the semiconductor pattern structure and constructing, using the processor optical critical dimension (OCD) models by using a set of input parameters for each layer of the semiconductor pattern structure. The method further includes calculating, using the processor, theoretical optical responses from a theoretical input generated by the OCD models. In addition, the method provides for comparing, using the processor, the optical responses spectra of the semiconductor pattern structure to the theoretical optical responses to determine output parameters for the optical roughness of the semiconductor pattern structure.