知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

5 条记录 (耗时 0.014 秒)

    SELF-ALIGNED DEVICES AND METHODS OF MANUFACTURE
    2.
    发明申请
    SELF-ALIGNED DEVICES AND METHODS OF MANUFACTURE 有权
    自对准设备及其制造方法

    公开(公告)号：US20140170854A1

    公开(公告)日：2014-06-19

    申请号：US14188814

    申请日：2014-02-25

    申请人： International Business Machines Corporation

    发明人： Roger A. BOOTH, JR. ,  Kangguo CHENG ,  Joseph Ervin ,  Chengwen PEI ,  Ravi M. TODI ,  Geng WANG

    IPC分类号： H01L21/3105

    CPC分类号： H01L21/31056 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139

    摘要： A method includes forming patterned lines on a substrate having a predetermined pitch. The method further includes forming spacer sidewalls on sidewalls of the patterned lines. The method further includes forming material in a space between the spacer sidewalls of adjacent patterned lines. The method further includes forming another patterned line from the material by protecting the material in the space between the spacer sidewalls of adjacent patterned lines while removing the spacer sidewalls. The method further includes transferring a pattern of the patterned lines and the patterned line to the substrate.

    摘要翻译： 一种方法包括在具有预定间距的基底上形成图案线。 该方法还包括在图案化线的侧壁上形成间隔壁。 该方法还包括在相邻图案线的间隔壁侧壁之间的空间中形成材料。 该方法还包括通过在相邻图案化线的间隔壁侧壁之间的空间中保护材料同时去除间隔壁侧壁而从该材料形成另一图案化线。 该方法还包括将图案化线和图案化线的图案转移到衬底。

    METAL TRENCH CAPACITOR AND IMPROVED ISOLATION AND METHODS OF MANUFACTURE
    5.
    发明申请
    METAL TRENCH CAPACITOR AND IMPROVED ISOLATION AND METHODS OF MANUFACTURE 有权
    金属电镀电容器和改进的隔离和制造方法

    公开(公告)号：US20150014814A1

    公开(公告)日：2015-01-15

    申请号：US14467580

    申请日：2014-08-25

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： Roger A. BOOTH, JR. ,  Kangguo CHENG ,  Joseph ERVIN ,  Chengwen PEI ,  Ravi M. TODI ,  Geng WANG

    IPC分类号： H01L49/02 ,  H01L27/12 ,  H01L27/108

    CPC分类号： H01L27/10829 ,  H01L21/743 ,  H01L21/76283 ,  H01L27/0629 ,  H01L27/108 ,  H01L27/1087 ,  H01L27/1203 ,  H01L28/60 ,  H01L28/92 ,  H01L29/0649 ,  H01L29/66181

    摘要： A high-k dielectric metal trench capacitor and improved isolation and methods of manufacturing the same is provided. The method includes forming at least one deep trench in a substrate, and filling the deep trench with sacrificial fill material and a poly material. The method further includes continuing with CMOS processes, comprising forming at least one transistor and back end of line (BEOL) layer. The method further includes removing the sacrificial fill material from the deep trenches to expose sidewalls, and forming a capacitor plate on the exposed sidewalls of the deep trench. The method further includes lining the capacitor plate with a high-k dielectric material and filling remaining portions of the deep trench with a metal material, over the high-k dielectric material. The method further includes providing a passivation layer on the deep trench filled with the metal material and the high-k dielectric material.

    摘要翻译： 提供了高k电介质金属沟槽电容器和改进的隔离及其制造方法。 该方法包括在衬底中形成至少一个深沟槽，并用牺牲填充材料和聚合材料填充深沟槽。 该方法还包括继续CMOS工艺，包括形成至少一个晶体管和后端（BEOL）层。 该方法还包括从深沟槽去除牺牲填充材料以暴露侧壁，以及在深沟槽的暴露的侧壁上形成电容器板。 该方法还包括用高k电介质材料衬套电容器板，并用金属材料在高k电介质材料上填充深沟槽的剩余部分。 该方法还包括在填充有金属材料和高k电介质材料的深沟槽上提供钝化层。