公开(公告)号：US20140315331A1

公开(公告)日：2014-10-23

申请号：US14205078

申请日：2014-03-11

申请人： Intermolecular, Inc.

发明人： Sandip Niyogi ,  Shuogang Huang ,  Chi-I Lang

IPC分类号： H01L21/66 ,  H01L21/306

CPC分类号： H01L22/12 ,  H01L21/02052 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/67051 ,  H01L21/6708 ,  H01L22/20 ,  H01L22/26

摘要： Candidate wet processes for native oxide removal from, and passivation of, germanium surfaces can be screened by high-productivity combinatorial variation of different process parameters on different site-isolated regions of a single substrate. Variable process parameters include the choice of hydrohalic acid used to remove the native oxide, the concentration of the acid in the solution, the exposure time, and the use of an optional sulfur passivation step. Measurements to compare the results of the process variations include attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR), contact angle, atomic force microscopy (AFM), scanning electron microscopy (SEM), and X-ray fluorescence (XRF). A sample screening experiment indicated somewhat less native oxide regrowth using HCl or HBr without sulfur passivation, compared to using HF with sulfur passivation.

摘要翻译： 可以通过在单个衬底的不同位置分离区域上的不同工艺参数的高生产率组合变化来筛选锗表面的自然氧化物去除和钝化的候选湿法。 可变工艺参数包括用于去除天然氧化物的氢卤酸的选择，溶液中酸的浓度，暴露时间以及使用任选的硫钝化步骤。 用于比较过程变化结果的测量包括衰减全反射傅立叶变换红外光谱（ATR-FTIR），接触角，原子力显微镜（AFM），扫描电子显微镜（SEM）和X射线荧光（XRF）。 与使用具有硫钝化的HF相比，样品筛选实验表明使用没有硫钝化的HCl或HBr较少的天然氧化物再生长。

公开(公告)号：US20140170857A1

公开(公告)日：2014-06-19

申请号：US13718995

申请日：2012-12-18

申请人： INTERMOLECULAR, INC.

发明人： Chi-I Lang ,  Shuogang Huang ,  Jeffrey Chih-Hou Lowe ,  Robert Anthony Sculac

IPC分类号： B44C1/22 ,  H01L21/306

CPC分类号： H01L21/6708 ,  H01L21/32134 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/823842

摘要： A method of combinatorial processing involving etching a first material and a second material on a substrate comprising: etching the first material with a high first etch rate with a first etchant; etching the second material with a high second etch rate with a second etchant, wherein the first etchant and the second etchant are used sequentially without being separated by a rinse.

摘要翻译： 一种组合处理方法，包括在衬底上蚀刻第一材料和第二材料，包括：用第一蚀刻剂以高的第一蚀刻速率蚀刻第一材料; 用第二蚀刻剂以高的第二蚀刻速率蚀刻第二材料，其中顺序地使用第一蚀刻剂和第二蚀刻剂，而不用冲洗分离。

公开(公告)号：US09373518B2

公开(公告)日：2016-06-21

申请号：US14096369

申请日：2013-12-04

申请人： Intermolecular, Inc.

发明人： Edwin Adhiprakasha ,  Shuogang Huang

IPC分类号： C03C15/00 ,  C03C25/68 ,  H01L21/302 ,  H01L21/461 ,  H01L21/3065 ,  H01L21/67

CPC分类号： H01L21/3065 ,  H01L21/67063 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/6719

摘要： A method for combinatorially processing a substrate is provided. The method includes introducing a first etchant into a reactor cell and introducing a fluid into the reactor cell while the first etchant remains in the reactor cell. After initiating the introducing the fluid, contents of the reactor cell are removed through a first removal line and a second removal line, wherein the first removal line extends farther into the reactor cell than the second removal line. A level of the fluid above an inlet to the first removal line is maintained while removing the contents. A second etchant is introduced into the reactor cell while removing the contents through the first removal line and the second removal line. The method includes continuing the introducing of the second etchant until a concentration of the second etchant is at a desired level, wherein the surface of the substrate remains submerged.

摘要翻译： 提供了一种用于组合处理衬底的方法。 该方法包括将第一蚀刻剂引入反应器电池并将流体引入反应器电池中，同时第一蚀刻剂保留在反应器电池中。 在开始引入流体之后，通过第一去除管线和第二去除管线去除反应器单元的内容物，其中第一去除管线比第二去除管线更远地延伸进入反应器室。 在移除内容物的同时维持在第一去除线的入口上方的流体的水平。 将第二蚀刻剂引入反应器电池中，同时通过第一去除线和第二去除线去除内容物。 该方法包括继续引入第二蚀刻剂，直到第二蚀刻剂的浓度处于所需的水平，其中衬底的表面保持浸没。

公开(公告)号：US20140094037A1

公开(公告)日：2014-04-03

申请号：US14096369

申请日：2013-12-04

申请人： Intermolecular, Inc.

发明人： Edwin Adhiprakasha ,  Shuogang Huang

IPC分类号： H01L21/3065 ,  H01L21/67

CPC分类号： H01L21/3065 ,  H01L21/67063 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/6719

摘要： A method for combinatorially processing a substrate is provided. The method includes introducing a first etchant into a reactor cell and introducing a fluid into the reactor cell while the first etchant remains in the reactor cell. After initiating the introducing the fluid, contents of the reactor cell are removed through a first removal line and a second removal line, wherein the first removal line extends farther into the reactor cell than the second removal line. A level of the fluid above an inlet to the first removal line is maintained while removing the contents. A second etchant is introduced into the reactor cell while removing the contents through the first removal line and the second removal line. The method includes continuing the introducing of the second etchant until a concentration of the second etchant is at a desired level, wherein the surface of the substrate remains submerged.

摘要翻译： 提供了一种用于组合处理衬底的方法。 该方法包括将第一蚀刻剂引入反应器电池并将流体引入反应器电池中，同时第一蚀刻剂保留在反应器电池中。 在开始引入流体之后，通过第一去除管线和第二去除管线去除反应器单元的内容物，其中第一去除管线比第二去除管线更远地延伸进入反应器室。 在移除内容物的同时维持在第一去除线的入口上方的流体的水平。 将第二蚀刻剂引入反应器电池中，同时通过第一去除线和第二去除线去除内容物。 该方法包括继续引入第二蚀刻剂，直到第二蚀刻剂的浓度处于所需的水平，其中衬底的表面保持浸没。