公开(公告)号：US20210305255A1

公开(公告)日：2021-09-30

申请号：US16828507

申请日：2020-03-24

申请人： Intel Corporation

发明人： Juan G. ALZATE VINASCO ,  Travis W. LAJOIE ,  Abhishek A. SHARMA ,  Kimberly L. PIERCE ,  Elliot N. TAN ,  Yu-Jin CHEN ,  Van H. LE ,  Pei-Hua WANG ,  Bernhard SELL

IPC分类号： H01L27/108 ,  H01L23/528 ,  H01L23/522 ,  H01L49/02

摘要： Embodiments herein describe techniques for a memory device including at least two memory cells. A first memory cell includes a first storage cell and a first transistor to control access to the first storage cell. A second memory cell includes a second storage cell and a second transistor to control access to the second storage cell. A shared contact electrode is shared between the first transistor and the second transistor, the shared contact electrode being coupled to a source area or a drain area of the first transistor, coupled to a source area or a drain area of the second transistor, and further being coupled to a bit line of the memory device. Other embodiments may be described and/or claimed.

公开(公告)号：US20220199839A1

公开(公告)日：2022-06-23

申请号：US17133599

申请日：2020-12-23

申请人： Intel Corporation

发明人： Arnab SEN GUPTA ,  Urusa ALAAN ,  Justin WEBER ,  Charles C. KUO ,  Yu-Jin CHEN ,  Kaan OGUZ ,  Matthew V. METZ ,  Abhishek A. SHARMA ,  Prashant MAJHI ,  Brian S. DOYLE ,  Van H. LE

IPC分类号： H01L29/872 ,  H01L27/07 ,  H01L29/47 ,  H01L29/22

摘要： Embodiments disclosed herein include semiconductor devices with Schottky diodes in a back end of line stack. In an embodiment, a semiconductor device comprises a semiconductor layer, where transistor devices are provided in the semiconductor layer, and a back end stack over the semiconductor layer. In an embodiment, a diode is in the back end stack. In an embodiment, the diode comprises a first electrode, a semiconductor region over the first electrode, and a second electrode over the semiconductor region. In an embodiment, a first interface between the first electrode and the semiconductor region is an ohmic contact, and a second interface between the semiconductor region and the second electrode is a Schottky contact.