Performance of additional refresh operations during self-refresh mode

    公开(公告)号:US10522207B2

    公开(公告)日:2019-12-31

    申请号:US15665143

    申请日:2017-07-31

    Abstract: Embodiments are generally directed to performance of additional refresh operations during self-refresh mode. An embodiment of a memory device includes one or more memory banks, a mode register set, the mode register set including a first set of mode register bits, and a control logic to provide control operations for the memory device, the operations including refresh operations for the one or more memory banks in a refresh credit mode. The control logic is to perform one or more extra refresh cycles in response to receipt of a self-refresh command, the self-refresh command to provide current refresh status information, and is to store information in the first set of mode register bits regarding a modified refresh status after the performance of the one or more extra refresh cycles.

    Performance of additional refresh operations during self-refresh mode

    公开(公告)号:US09721640B2

    公开(公告)日:2017-08-01

    申请号:US15184944

    申请日:2016-06-16

    CPC classification number: G11C11/40615 G11C11/4074 G11C2211/4067

    Abstract: Embodiments are generally directed to performance of additional refresh operations during self-refresh mode. An embodiment of a memory device includes one or more memory banks, a mode register set, the mode register set including a first set of mode register bits, and a control logic to provide control operations for the memory device, the operations including refresh operations for the one or more memory banks in a refresh credit mode. The control logic is to perform one or more extra refresh cycles in response to receipt of a self-refresh command, the self-refresh command to provide current refresh status information, and is to store information in the first set of mode register bits regarding a modified refresh status after the performance of the one or more extra refresh cycles.

Patent Agency Ranking