公开(公告)号：US12142568B2

公开(公告)日：2024-11-12

申请号：US18139275

申请日：2023-04-25

Applicant: Intel Corporation

Inventor： Sanka Ganesan ,  Kevin McCarthy ,  Leigh M. Tribolet ,  Debendra Mallik ,  Ravindranath V. Mahajan ,  Robert L. Sankman

IPC: H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00 ,  H01L23/31 ,  H01L23/367 ,  H01L23/498 ,  H01L25/00 ,  H01L25/065

Abstract: Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a bridge over a glass patch. The bridge is coupled to the glass patch with an adhesive layer. The semiconductor package also includes a high-density packaging (HDP) substrate over the bridge and the glass patch. The HDP substrate is conductively coupled to the glass patch with a plurality of through mold vias (TMVs). The semiconductor package further includes a plurality of dies over the HDP substrate, and a first encapsulation layer over the TMVs, the bridge, the adhesive layer, and the glass patch. The HDP substrate includes a plurality of conductive interconnects that conductively couple the dies to the bridge and glass patch. The bridge may be an embedded multi-die interconnect bridge (EMIB), where the EMIB is communicatively coupled to the dies, and the glass patch includes a plurality of through glass vias (TGVs).

公开(公告)号：US11694959B2

公开(公告)日：2023-07-04

申请号：US16524748

申请日：2019-07-29

Applicant: Intel Corporation

Inventor： Sanka Ganesan ,  Kevin McCarthy ,  Leigh M. Tribolet ,  Debendra Mallik ,  Ravindranath V. Mahajan ,  Robert L. Sankman

IPC: H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/31 ,  H01L23/367 ,  H01L23/498 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L23/5381 ,  H01L21/486 ,  H01L21/4853 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/3675 ,  H01L23/49816 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/1703 ,  H01L2224/32225 ,  H01L2224/73204

Abstract: Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a bridge over a glass patch. The bridge is coupled to the glass patch with an adhesive layer. The semiconductor package also includes a high-density packaging (HDP) substrate over the bridge and the glass patch. The HDP substrate is conductively coupled to the glass patch with a plurality of through mold vias (TMVs). The semiconductor package further includes a plurality of dies over the HDP substrate, and a first encapsulation layer over the TMVs, the bridge, the adhesive layer, and the glass patch. The HDP substrate includes a plurality of conductive interconnects that conductively couple the dies to the bridge and glass patch. The bridge may be an embedded multi-die interconnect bridge (EMIB), where the EMIB is communicatively coupled to the dies, and the glass patch includes a plurality of through glass vias (TGVs).

公开(公告)号：US11756889B2

公开(公告)日：2023-09-12

申请号：US16534027

申请日：2019-08-07

Applicant: Intel Corporation

Inventor： Sanka Ganesan ,  Kevin McCarthy ,  Leigh M. Tribolet ,  Debendra Mallik ,  Ravindranath V. Mahajan ,  Robert L. Sankman

IPC: H01L23/538 ,  H01L23/00 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683

CPC classification number: H01L23/5381 ,  H01L21/486 ,  H01L21/4853 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/08 ,  H01L24/19 ,  H01L24/20 ,  H01L24/80 ,  H01L2221/68354 ,  H01L2221/68372 ,  H01L2224/08225 ,  H01L2224/214 ,  H01L2224/80006 ,  H01L2224/80894 ,  H01L2924/0105 ,  H01L2924/01029 ,  H01L2924/05442

Abstract: Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a bridge with a hybrid layer on a high-density packaging (HDP) substrate, a plurality of dies over the bridge and the HDP substrate, and a plurality of through mold vias (TMVs) on the HDP substrate. The bridge is coupled between the dies and the HDP substrate. The bridge is directly coupled to two dies of the dies with the hybrid layer, where a top surface of the hybrid layer of the bridge is directly on bottom surfaces of the dies, and where a bottom surface of the bridge is directly on a top surface of the HDP substrate. The TMVs couple the HDP substrate to the dies, and have a thickness that is substantially equal to a thickness of the bridge. The hybrid layer includes conductive pads, surface finish, and/or dielectric.

公开(公告)号：US11521923B2

公开(公告)日：2022-12-06

申请号：US15988613

申请日：2018-05-24

Applicant: Intel Corporation

Inventor： Robert L. Sankman ,  Kevin McCarthy

IPC: H01L23/498 ,  H01L21/48

Abstract: Disclosed herein are integrated circuit (IC) package supports and related apparatuses and methods. For example, in some embodiments, an IC package support may include a layer of dielectric material; a conductive pad at least partially on a top surface of the layer of dielectric material; and a layer of material on side surfaces of the conductive pad, wherein the layer of material does not extend onto the top surface of the layer of dielectric material. Other embodiments are also disclosed.