公开(公告)号：US20220199758A1

公开(公告)日：2022-06-23

申请号：US17132970

申请日：2020-12-23

申请人： Intel Corporation

发明人： Arnab Sen Gupta ,  Jason C. Retasket ,  Matthew V. Metz ,  I-Cheng Tung ,  Chia-Ching Lin ,  Sou-Chi Chang ,  Kaan Oguz ,  Uygar E. Avci ,  Edward Johnson

IPC分类号： H01L49/02 ,  H01L29/51 ,  H01L23/522 ,  H01L27/06 ,  H01L29/78

摘要： Capacitors with a carbon-based electrode layer in contact with a ferroelectric insulator. The insulator may be a perovskite oxide. Low reactivity of the carbon-based electrode may improve stability of a ferroelectric capacitor. A carbon-based electrode layer may be predominantly carbon and have a low electrical resistivity. A carbon-based electrode layer may be the only layer of an electrode, or it may be a barrier between the insulator and another electrode layer. Both electrodes of a capacitor may include a carbon-based electrode layer, or a carbon-based electrode layer may be included in only one electrode.