IN CORE LARGE AREA CAPACITORS
    1.
    发明公开

    公开(公告)号:US20240203664A1

    公开(公告)日:2024-06-20

    申请号:US18081362

    申请日:2022-12-14

    申请人: Intel Corporation

    IPC分类号: H01G4/33 H01G4/10

    CPC分类号: H01G4/33 H01G4/105

    摘要: Embodiments disclosed herein include a core for a package substrate. In an embodiment, the core comprises a first substrate with a first surface and a second surface, a first recess into the first surface of the first substrate, a first layer in the first recess, where the first layer is electrically conductive, a second layer over the first layer, where the second layer is a dielectric layer, and a third layer over the second layer, where the third layer is electrically conductive. In an embodiment, the core further comprises a second substrate with a third surface and a fourth surface, where the third surface of the second substrate faces the first surface of the first substrate, a second recess in the third surface of the second substrate, and a fourth layer in the second recess, where the fourth layer is electrically conductive, and the fourth layer contacts the third layer.

    SUBSTRATE ARCHITECTURE FOR ENHANCED ELECTROSTATIC CHUCKING

    公开(公告)号:US20240186197A1

    公开(公告)日:2024-06-06

    申请号:US18060592

    申请日:2022-12-01

    申请人: Intel Corporation

    IPC分类号: H01L23/16

    CPC分类号: H01L23/16

    摘要: The present disclosure is directed to a semiconductor panel providing a laminated structure and a plurality of electrically isolated structures distributed throughout the laminated structure to increase an attraction between the laminated structure and an electrostatic chuck. In an aspect, the electrically isolated structures are positioned in spaces in the semiconductor panel without electrically active devices and interconnects. In yet another aspect, the present method provides a semiconductor panel and forming a plurality of electrically isolated structures in selected positions on the semiconductor panel and an electrostatic chuck configured to carry an electrostatic charge for producing an electrostatic force at its top surface, placing the semiconductor panel on the electrostatic chuck, and activating the electrostatic chuck to induce polarization at the top surface to produce an attractive force having a greater magnitude at the positions with the plurality of electrically isolated structures.