公开(公告)号：US11089691B2

公开(公告)日：2021-08-10

申请号：US16489361

申请日：2018-02-27

Applicant: InkTec Co., Ltd.

Inventor： Su Han Kim ,  Kwang-Choon Chung ,  Jung Yoon Moon ,  Sung In Ha ,  Byung Woong Moon

IPC: H05K3/06 ,  C09K13/00 ,  H05K3/24 ,  H05K3/12 ,  H05K3/18 ,  H05K3/38 ,  H05K3/10

Abstract: The disclosure relates to a microcircuit forming method. The microcircuit forming method according to the disclosure comprises: a seed-layer forming step for forming a high-reflectivity seed layer on a substrate material by using a conductive material; a pattern-layer forming step for forming a pattern layer on the seed layer, the pattern layer having a pattern hole arranged thereon to allow the seed layer to be selectively exposed therethrough; a plating step for filling the pattern hole with a conductive material; a pattern-layer removing step for removing the pattern layer; and a seed-layer patterning step for removing a part of the seed layer which does not overlap the conductive material in the plating step, wherein the high-reflectivity seed layer has a specular reflection property.