公开(公告)号：US20160112041A1

公开(公告)日：2016-04-21

申请号：US14514476

申请日：2014-10-15

Applicant: Infineon Technologies Austria AG

Inventor： Kevni Bueyuektas ,  Uwe Wahl ,  Andreas Schloegl ,  Gerhard Noebauer

IPC: H03K17/687

CPC classification number: H03K17/687 ,  G06F17/5036

Abstract: A power transistor model is described which comprises a source drain path, a first current source and a voltage controlled second current source in the source drain path which model the static voltage-current-relationship of a modeled power transistor, wherein the voltage-controlled second current source models a nonlinear behavior of a drift zone of the power transistor.

Abstract translation: 描述了功率晶体管模型，其包括源极漏极路径，源极漏极路径中的第一电流源和压控第二电流源，其对建模的功率晶体管的静态电压 - 电流关系进行建模，其中电压控制的第二 电流源模拟功率晶体管漂移区的非线性行为。

公开(公告)号：US20140110822A1

公开(公告)日：2014-04-24

申请号：US13655630

申请日：2012-10-19

Applicant: Infineon Technologies Austria AG

Inventor： Joachim Weyers ,  Kevni Bueyuektas ,  Franz Hirler ,  Anton Mauder

IPC: H01L49/02

CPC classification number: H01L28/10 ,  H01F17/0033 ,  H01L23/645 ,  H01L25/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a first coil that is monolithically integrated in a first portion of a semiconductor body and that includes a first winding wrapping around a first core structure. A second coil is monolithically integrated in a second portion of the semiconductor body and includes a second winding wrapping around the second core structure. The first and second coils are magnetically coupled with each other. An insulator frame in the semiconductor body surrounds the first portion and excludes the second portion. High dielectric strength between the first and the second coils is achieved without patterning a backside metallization for connecting the turns of the windings and without being restricted to thin substrates.

Abstract translation: 半导体器件包括：第一线圈，其单片集成在半导体本体的第一部分中，并且包括围绕第一芯结构缠绕的第一绕组。 第二线圈单片集成在半导体本体的第二部分中，并且包括围绕第二芯结构缠绕的第二绕组。 第一和第二线圈彼此磁耦合。 半导体主体中的绝缘体框架围绕第一部分并排除第二部分。 实现第一和第二线圈之间的高介电强度，而不需要形成用于连接绕组匝的背面金属化，而不限于薄的衬底。

公开(公告)号：US09640602B2

公开(公告)日：2017-05-02

申请号：US13655630

申请日：2012-10-19

Applicant: Infineon Technologies Austria AG

Inventor： Joachim Weyers ,  Kevni Bueyuektas ,  Franz Hirler ,  Anton Mauder

IPC: H01L49/02 ,  H01L25/00 ,  H01L23/64 ,  H01F17/00

CPC classification number: H01L28/10 ,  H01F17/0033 ,  H01L23/645 ,  H01L25/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a first coil that is monolithically integrated in a first portion of a semiconductor body and that includes a first winding wrapping around a first core structure. A second coil is monolithically integrated in a second portion of the semiconductor body and includes a second winding wrapping around the second core structure. The first and second coils are magnetically coupled with each other. An insulator frame in the semiconductor body surrounds the first portion and excludes the second portion. High dielectric strength between the first and the second coils is achieved without patterning a backside metallization for connecting the turns of the windings and without being restricted to thin substrates.