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公开(公告)号：US12014981B2
公开(公告)日：2024-06-18
申请号：US17662790
申请日：2022-05-10
发明人： Marcus Nuebling , Mathias Racki
IPC分类号： H01L23/522 , H01L27/06 , H01L49/02
CPC分类号： H01L23/5227 , H01L23/5225 , H01L27/0629 , H01L28/10
摘要： An example circuit includes a coil structure located on at least a first layer of an integrated circuit (IC); and a circuit component comprising conduction paths. The conduction paths are located on one or more layers separate from the first layer and the first layer and the one or more layers form parallel planes. The conduction paths of the circuit component are oriented to avoid eddy currents in the conduction paths caused by an electric current through the coil structure and form a patterned shield. At least some of the conduction paths define an area, and the coil structure is located within the defined area.
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公开(公告)号：US20230369204A1
公开(公告)日：2023-11-16
申请号：US17662790
申请日：2022-05-10
发明人： Marcus Nuebling , Mathias Racki
IPC分类号： H01L23/522 , H01L49/02 , H01L27/06
CPC分类号： H01L23/5227 , H01L23/5225 , H01L28/10 , H01L27/0629
摘要： An example circuit includes a coil structure located on at least a first layer of an integrated circuit (IC); and a circuit component comprising conduction paths. The conduction paths are located on one or more layers separate from the first layer and the first layer and the one or more layers form parallel planes. The conduction paths of the circuit component are oriented to avoid eddy currents in the conduction paths caused by an electric current through the coil structure and form a patterned shield. At least some of the conduction paths define an area, and the coil structure is located within the defined area.
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公开(公告)号：US12021139B2
公开(公告)日：2024-06-25
申请号：US17121008
申请日：2020-12-14
发明人： Adrian Finney , Norbert Krischke , Mathias Racki
CPC分类号： H01L29/7803 , G01K7/01 , H01L27/0623 , H01L29/66272 , H01L29/7304 , H01L29/732
摘要： A semiconductor arrangement is disclosed. The semiconductor arrangement includes: a semiconductor body and a temperature sensor (TES) integrated in the semiconductor body. The TES includes: a first semiconductor region of a first doping type arranged, in a vertical direction of the semiconductor body, between a second semiconductor region of a second doping type and a third semiconductor of the second doping type, and a contact plug ohmically connecting the first semiconductor region and the second semiconductor region. The first semiconductor region includes a base region section spaced apart from the contact plug in a first lateral direction of the semiconductor body and a resistor section arranged between the base region section and the contact plug. The resistor section is implemented such that an ohmic resistance of the resistor section between the base region section and the first semiconductor region is at least 1 MΩ.
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公开(公告)号：US20210193827A1
公开(公告)日：2021-06-24
申请号：US17121008
申请日：2020-12-14
发明人： Adrian Finney , Norbert Krischke , Mathias Racki
摘要： A semiconductor arrangement is disclosed. The semiconductor arrangement includes: a semiconductor body and a temperature sensor (TES) integrated in the semiconductor body. The TES includes: a first semiconductor region of a first doping type arranged, in a vertical direction of the semiconductor body, between a second semiconductor region of a second doping type and a third semiconductor of the second doping type, and a contact plug ohmically connecting the first semiconductor region and the second semiconductor region. The first semiconductor region includes a base region section spaced apart from the contact plug in a first lateral direction of the semiconductor body and a resistor section arranged between the base region section and the contact plug. The resistor section is implemented such that an ohmic resistance of the resistor section between the base region section and the first semiconductor region is at least 1 MΩ.
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