公开(公告)号：US20110044113A1

公开(公告)日：2011-02-24

申请号：US12828480

申请日：2010-07-01

Applicant: In-Mo KIM ,  Jae Yong JEONG

Inventor： In-Mo KIM ,  Jae Yong JEONG

IPC: G11C16/04

CPC classification number: G11C11/5628 ,  G11C16/12 ,  G11C16/349

Abstract: A nonvolatile memory device performs a program operation on selected memory cells by determining a level of a program voltage based on a degree of deterioration of the memory cells, and executing the program operation using the program voltage.

Abstract translation: 非易失性存储器件通过基于存储器单元的劣化程度确定编程电压的电平，并使用编程电压执行编程操作来对所选存储单元执行编程操作。