公开(公告)号：US20220319901A1

公开(公告)日：2022-10-06

申请号：US17708688

申请日：2022-03-30

Applicant: INVENSAS BONDING TECHNOLOGIES, INC.

Inventor： Dominik Suwito ,  Gaius Gillman Fountain, JR. ,  Guilian Gao

IPC: H01L21/683 ,  H01L21/78

Abstract: A bonding method is disclosed. The method can include directly bonding a first nonconductive bonding material of a semiconductor element to a second nonconductive bonding material of a carrier without an intervening adhesive. The first nonconductive bonding material is disposed on a device portion of the semiconductor element. The second nonconductive bonding material is disposed on a bulk portion of the carrier. A deposited dielectric layer is disposed between the device portion and the bulk portion. The method can include removing the carrier from the semiconductor element by transferring thermal energy to the dielectric layer to induce diffusion of gas out of the dielectric layer.