公开(公告)号：US20040110354A1

公开(公告)日：2004-06-10

申请号：US10316211

申请日：2002-12-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Wesley C. Natzle ,  David C. Ahlgren ,  Steven G. Barbee ,  Marc W. Cantell ,  Basanth Jagannathan ,  Louis D. Lanzerotti ,  Seshadri Subbanna ,  Ryan W. Wuthrich

IPC: H01L021/331 ,  H01L021/8222

CPC classification number: H01L29/66242 ,  H01L21/31116 ,  H01L21/8249

Abstract: An oxide etch process is described which may be used for emitter and base preparation in bipolar SiGe devices. The low temperature process employed produces electrical insulation between the emitter and base by a COR etch which preserves insulating TEOS glass. The insulating TEOS glass provides reduced capacitance and helps to achieve high speed. An apparatus is also described for practicing the disclosed process.

Abstract translation: 描述了氧化物蚀刻工艺，其可用于双极SiGe器件中的发射极和基极准备。 所采用的低温工艺通过保留绝缘TEOS玻璃的COR蚀刻产生发射极和基极之间的电绝缘。 绝缘TEOS玻璃提供降低的电容并有助于实现高速度。 还描述了用于实施所公开的方法的装置。