公开(公告)号：US20020172811A1

公开(公告)日：2002-11-21

申请号：US09858687

申请日：2001-05-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Edward Paul Barth ,  Stephan A. Cohen ,  Chester Dziobkowski ,  John Anthony Fitzsimmons ,  Stephen McConnell Gates ,  Thomas Henry Ivers ,  Sampath Purushothaman ,  Darryl D. Restaino ,  Horatio Seymour Wildman

IPC: B32B009/00 ,  B32B015/00

CPC classification number: H01L21/76832 ,  B32B27/08 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/24917 ,  Y10T428/31663 ,  Y10T428/31681 ,  Y10T428/31696 ,  H01L2924/00

Abstract: A diffusion barrier that has a low dielectric constant, k, yet resistant to oxygen and/or moisture permeability is provided. The diffusion barrier includes a dielectric stack having at least two or more dielectric films, each film having a dielectric constant of about 8 or less, wherein the dielectric stack comprises alternating films composed of a high-permeability material and a low-permeability material. A semiconductor structure including substrate having at least one wiring region and the inventive diffusion barrier formed on a surface of the substrate is also provided.

Abstract translation: 提供了具有低介电常数k但仍具有耐氧和/或透湿性的扩散阻挡层。 扩散阻挡层包括具有至少两个或更多个介电膜的电介质堆叠，每个膜具有约8或更小的介电常数，其中该电介质叠层包括由高导磁率材料和低导磁率材料构成的交替膜。 还提供了包括具有形成在基板的表面上的至少一个布线区域和本发明的扩散阻挡层的基板的半导体结构。

公开(公告)号：US20040115407A1

公开(公告)日：2004-06-17

申请号：US10320111

申请日：2002-12-16

Applicant: International Business Machines Corporation

Inventor： Stephan A. Cohen ,  Stephen McConnell Gates ,  Alfred Grill ,  Vishnubhai V. Patel

IPC: B32B003/00

CPC classification number: H01L21/02167 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/12535 ,  Y10T428/24917 ,  Y10T428/249953 ,  H01L2924/00

Abstract: A diffusion barrier useful in semiconductor electronic devices, such as multi-level interconnect wiring structures, is provided. The diffusion barrier is characterized as having a low-dielectric constant of less than 3.5, preferably less than 3.0, as well as being capable of substantially preventing Cu and/or oxygen from diffusing into the active device areas of the electronic device. Since the diffusion barrier has a low-dielectric constant, the diffusion barrier has only a minor effect on the effective dielectric constant of the interconnect structure. The low-k diffusion barrier includes atoms of Si, C, H and N. The N atoms are non-uniformly distributed within the low-k diffusion barrier. Optionally, the low-k diffusion barrier may include atoms of Ge, O, halogens such as F or any combination thereof.

Abstract translation: 提供了可用于诸如多层互连布线结构的半导体电子器件中的扩散屏障。 扩散阻挡层的特征在于具有小于3.5，优选小于3.0的低介电常数，并且能够基本上防止Cu和/或氧扩散到电子器件的有源器件区域。 由于扩散阻挡层具有低介电常数，所以扩散阻挡层对互连结构的有效介电常数只有较小的影响。 低k扩散势垒包括Si，C，H和N的原子.N原子在低k扩散势垒内不均匀分布。 任选地，低k扩散阻挡层可以包括Ge，O的原子，诸如F的卤素或其任何组合。