公开(公告)号：US20140103451A1

公开(公告)日：2014-04-17

申请号：US13654010

申请日：2012-10-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORP

Inventor： Qiqing C. Ouyang ,  Pranita Kerber ,  Alexander Reznicek

IPC: H01L27/088

CPC classification number: H01L21/8234 ,  H01L21/845 ,  H01L27/1211

Abstract: A fin field-effect transistor (finFET) assembly includes a first finFET device having fins of a first height and a second finFET device having fins of a second height. Each of the first and second finFET devices includes an epitaxial fill material covering source and drain regions of the first and second finFET devices. The epitaxial fill material of the first finFET device has a same height as the epitaxial fill material of the second finFET device.

Abstract translation: 鳍状场效应晶体管（finFET）组件包括具有第一高度的散热片的第一finFET器件和具有第二高度的鳍片的第二finFET器件。 第一和第二finFET器件中的每一个包括覆盖第一和第二finFET器件的源极和漏极区域的外延填充材料。 第一finFET器件的外延填充材料具有与第二finFET器件的外延填充材料相同的高度。

公开(公告)号：US20140167163A1

公开(公告)日：2014-06-19

申请号：US13716646

申请日：2012-12-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORP

Inventor： Kangguo Cheng ,  Ali Khakifirooz ,  Alexander Reznicek ,  Raghavasimhan Sreenivasan ,  Thomas N. Adam

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/66477 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/41791 ,  H01L29/785

Abstract: Embodiments include multi-fin finFET structures with epitaxially-grown merged source/drains and methods of forming the same. Embodiments may include an epitaxial insulator layer above a base substrate, a gate structure above the epitaxial insulator layer, a semiconductor fin below the gate structure, and an epitaxial source/drain region grown on the epitaxial insulator layer adjacent to an end of the semiconductor fin. The epitaxial insulator layer may be made of an epitaxial rare earth oxide material grown on a base semiconductor substrate. Embodiments may further include fin extension regions on the end of the semiconductor fin between the end of the end of the semiconductor fin and the epitaxial source/drain region. In some embodiments, the end of the semiconductor fin may be recessed below the gate structure.

Abstract translation: 实施例包括具有外延生长的合并源/排水管的多翅片finFET结构及其形成方法。 实施例可以包括在基底基板上方的外延绝缘体层，外延绝缘体层上方的栅极结构，栅极结构下方的半导体鳍片以及在外延绝缘体层上生长的与半导体鳍片的端部相邻的外延源极/漏极区域 。 外延绝缘体层可以由生长在基底半导体衬底上的外延稀土氧化物材料制成。 实施例还可以包括在半导体鳍片的端部的端部和外延源极/漏极区域之间的半导体鳍片的端部上的翅片延伸区域。 在一些实施例中，半导体鳍片的端部可以凹入门结构下方。