公开(公告)号：US20240355921A1

公开(公告)日：2024-10-24

申请号：US18238947

申请日：2023-08-28

申请人： INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

发明人： Sen HUANG ,  Qimeng JIANG ,  Xinyue DAI ,  Xinhua WANG ,  Xinyu LIU

IPC分类号： H01L29/778 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC分类号： H01L29/7789 ,  H01L29/08 ,  H01L29/41725 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7783

摘要： The folded channel gallium nitride based field-effect transistor includes: a base layer; a multi-heterojunction layer, including a channel layer and a barrier layer alternatingly stacked from bottom to top on a gallium nitride semi-insulating layer; a gallium nitride control layer on the multi-heterojunction layer and extending from one side of the channel region to at least a part of the groove; a current collapse suppression structure formed on the multi-heterojunction layer on another side of the channel region; a source electrode and a drain electrode that are respectively in contact with two sides of the multi-heterojunction layer on the gallium nitride semi-insulating layer; a gate electrode formed on the multi-heterojunction layer between the source electrode and the gallium nitride control layer; and a connecting structure passing over the gate electrode to electrically connect to the source electrode and the gallium nitride control layer.