- 专利标题： FOLDED CHANNEL GALLIUM NITRIDE BASED FIELD-EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
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申请号： US18238947申请日： 2023-08-28
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公开(公告)号： US20240355921A1公开(公告)日： 2024-10-24
- 发明人: Sen HUANG , Qimeng JIANG , Xinyue DAI , Xinhua WANG , Xinyu LIU
- 申请人： INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- 申请人地址： CN Chaoyang District
- 专利权人： INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- 当前专利权人： INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- 当前专利权人地址： CN Chaoyang District
- 优先权： CN 2310431333.9 2023.04.21
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/08 ; H01L29/417 ; H01L29/423 ; H01L29/66
摘要：
The folded channel gallium nitride based field-effect transistor includes: a base layer; a multi-heterojunction layer, including a channel layer and a barrier layer alternatingly stacked from bottom to top on a gallium nitride semi-insulating layer; a gallium nitride control layer on the multi-heterojunction layer and extending from one side of the channel region to at least a part of the groove; a current collapse suppression structure formed on the multi-heterojunction layer on another side of the channel region; a source electrode and a drain electrode that are respectively in contact with two sides of the multi-heterojunction layer on the gallium nitride semi-insulating layer; a gate electrode formed on the multi-heterojunction layer between the source electrode and the gallium nitride control layer; and a connecting structure passing over the gate electrode to electrically connect to the source electrode and the gallium nitride control layer.
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