公开(公告)号：US20040262697A1

公开(公告)日：2004-12-30

申请号：US10854772

申请日：2004-05-27

申请人： INFINEON TECHNOLOGIES

发明人： Gerhard Enders ,  Helmut Schneider ,  Peter Voigt

IPC分类号： H01L029/76

CPC分类号： H01L29/66583 ,  H01L21/28247 ,  H01L29/66553 ,  H01L29/6656

摘要： A method for fabricating a semiconductor gate structure including depositing at least one sacrificial layer on a semiconductor substrate; patterning the at least one sacrificial layer to form at least one cutout in the at least one sacrificial layer for uncovering the semiconductor substrate; forming a sidewall spacer over the sidewalls of the at least one sacrificial layer in the at least one cutout; forming a gate dielectric on the semiconductor substrate in the cutout; providing a gate electrode in the at least one cutout in the at lest one sacrificial layer; and removing the at least one sacrificial layer for the uncovering the gate electrode surrounded by the sidewall spacer. A semiconductor device is also provided.

摘要翻译： 一种用于制造半导体栅极结构的方法，包括在半导体衬底上沉积至少一个牺牲层; 图案化所述至少一个牺牲层以在所述至少一个牺牲层中形成至少一个切口以露出所述半导体衬底; 在所述至少一个切口中的所述至少一个牺牲层的侧壁上形成侧壁间隔物; 在所述切口中的所述半导体基板上形成栅极电介质; 在所述至少一个牺牲层中的所述至少一个切口中提供栅电极; 以及去除所述至少一个牺牲层以露出由所述侧壁间隔物包围的所述栅电极。 还提供了半导体器件。