公开(公告)号：US11667757B2

公开(公告)日：2023-06-06

申请号：US17139336

申请日：2020-12-31

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Dong-Sen Chen ,  Yu-Ju Kuo ,  Yung-Lung Tseng ,  Chun-Wei Su

IPC: C08G77/455 ,  C08G77/16 ,  C08G77/18 ,  C08G77/20 ,  C08G77/24 ,  C08G77/26 ,  C08G77/00 ,  C08G73/10 ,  C08K5/00 ,  C08L79/08 ,  C08G77/12

CPC classification number: C08G77/455 ,  C08G73/1039 ,  C08G73/1046 ,  C08G73/1064 ,  C08G73/1067 ,  C08G73/1075 ,  C08G73/1085 ,  C08G77/12 ,  C08G77/16 ,  C08G77/18 ,  C08G77/20 ,  C08G77/24 ,  C08G77/26 ,  C08G77/80 ,  C08K5/0025 ,  C08L79/08 ,  C08L2201/10 ,  C08L2203/20

Abstract: A polymer, a composition, and a polysiloxane-polyimide material thereof are provided. The polymer includes a first repeat unit and a second repeat unit. The first repeat unit has a structure represented by Formula (I) and the second repeat unit has a structure represented by Formula (II)




wherein A1 and A3 are independently tetravalent moiety; A2 is a divalent moiety; n≥1; m≥1; R1 is independently hydrogen, C1-8 alkyl, C1-8 fluoroalkyl, C1-8 alkoxy, or C6-12 aryl; and R2 is independently hydrogen, C1-8 alkyl, C1-8 fluoroalkyl, C1-8 alkoxy, C6-12 aryl, or a reactive functional group.

公开(公告)号：US09209403B2

公开(公告)日：2015-12-08

申请号：US13912172

申请日：2013-06-06

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Chi-Fu Tseng ,  Chyi-Ming Leu ,  Hsueh-Yi Liao ,  Yung-Lung Tseng

IPC: H01L31/0392 ,  C08G73/10 ,  H01L51/00 ,  C08L79/08

CPC classification number: H01L51/0035 ,  C08G73/1039 ,  C08G73/1042 ,  C08G73/1046 ,  C08G73/105 ,  C08G73/1064 ,  C08G73/1075 ,  C08G73/1078 ,  C08L79/08 ,  H01L31/03926 ,  Y02E10/50 ,  Y10T428/10 ,  Y10T428/31721

Abstract: A method for fabricating a flexible electrical device is provided. The method includes providing a first substrate, providing a second substrate opposed to the first substrate, wherein one of the first and second substrates includes a polyimide polymer of Formula (I) wherein B is a polycyclic aliphatic group, A is an aromatic group containing at least one ether bond, A′ is an aromatic or aliphatic group, and 1≦n/m≦4, directly fabricating a thin film transistor (TFT) on one of the first and second substrates which includes the polyimide polymer of Formula (I), and disposing a medium layer between the first substrate and the second substrate.

Abstract translation: 提供一种制造柔性电气装置的方法。 该方法包括提供第一衬底，提供与第一衬底相对的第二衬底，其中第一衬底和第二衬底中的一个衬底包括式（I）的聚酰亚胺聚合物，其中B是多环脂族基团，A是含有 至少一个醚键，A'是芳族或脂族基团，并且在第一和第二基底之一上直接制造薄膜晶体管（TFT），其包括式（I）的聚酰亚胺聚合物， 并且在第一基板和第二基板之间布置介质层。

公开(公告)号：US20130267061A1

公开(公告)日：2013-10-10

申请号：US13912172

申请日：2013-06-06

Applicant: Industrial Technology Research Institute

Inventor： Chi-Fu Tseng ,  Chyi-Ming Leu ,  Hsueh-Yi Liao ,  Yung-Lung Tseng

IPC: H01L51/00

CPC classification number: H01L51/0035 ,  C08G73/1039 ,  C08G73/1042 ,  C08G73/1046 ,  C08G73/105 ,  C08G73/1064 ,  C08G73/1075 ,  C08G73/1078 ,  C08L79/08 ,  H01L31/03926 ,  Y02E10/50 ,  Y10T428/10 ,  Y10T428/31721

Abstract: A method for fabricating a flexible electrical device is provided. The method includes providing a first substrate, providing a second substrate opposed to the first substrate, wherein one of the first and second substrates includes a polyimide polymer of Formula (I) wherein B is a polycyclic aliphatic group, A is an aromatic group containing at least one ether bond, A′ is an aromatic or aliphatic group, and 1≦n/m≦4, directly fabricating a thin film transistor (TFT) on one of the first and second substrates which includes the polyimide polymer of Formula (I), and disposing a medium layer between the first substrate and the second substrate.

Abstract translation: 提供一种制造柔性电气装置的方法。 该方法包括提供第一衬底，提供与第一衬底相对的第二衬底，其中第一衬底和第二衬底中的一个衬底包括式（I）的聚酰亚胺聚合物，其中B是多环脂族基团，A是含有 至少一个醚键，A'是芳族或脂族基团，并且在第一和第二基底之一上直接制造薄膜晶体管（TFT），其包括式（I）的聚酰亚胺聚合物， 并且在第一基板和第二基板之间布置介质层。