Abstract:
A measurement system is provided to measure a hole of a target, including a light source generation unit, a capturing unit and a processing unit. The light source generation unit generates a light source and focuses the light source on a plurality of different height planes. The capturing unit captures a plurality of images scattered from the plurality of different height planes. The processing unit obtains boundaries of the hole on the plurality of different height planes according to the plurality of images, samples image intensities of different azimuth angles on the boundaries of the hole on each of the plurality of different height planes to generate a plurality of sampling values, and develops a sidewall image of the hole according to the plurality of sampling values, the plurality of different height planes and the different azimuth angles.
Abstract:
According to one embodiment of a method for measuring a stacking overlay error, the method may use a differential interference contrast microscope system to measure a stacking overlay mark and focus on one overlay mark of a lower layer overlay mark and an upper layer overlay mark when measuring the stacking overlay mark. Then, the method uses an image analysis scheme to obtain an image of the stacking overlay mark from a photo-detector and obtains a first reference position of the lower layer overlay mark in a direction and a second reference position of the upper layer overlay mark in the direction from the image; and computes the stacking overlay error in the direction according to the first and the second reference positions.
Abstract:
A measurement system is provided to measure a hole of a target, including a light source generation unit, a capturing unit and a processing unit. The light source generation unit generates a light source and focuses the light source on a plurality of different height planes. The capturing unit captures a plurality of images scattered from the plurality of different height planes. The processing unit obtains boundaries of the hole on the plurality of different height planes according to the plurality of images, samples image intensities of different azimuth angles on the boundaries of the hole on each of the plurality of different height planes to generate a plurality of sampling values, and develops a sidewall image of the hole according to the plurality of sampling values, the plurality of different height planes and the different azimuth angles.
Abstract:
According to one embodiment of a method for measuring a stacking overlay error, the method may use a differential interference contrast microscope system to measure a stacking overlay mark and focus on one overlay mark of a lower layer overlay mark and an upper layer overlay mark when measuring the stacking overlay mark. Then, the method uses an image analysis scheme to obtain an image of the stacking overlay mark from a photo-detector and obtains a first reference position of the lower layer overlay mark in a direction and a second reference position of the upper layer overlay mark in the direction from the image; and computes the stacking overlay error in the direction according to the first and the second reference positions.