公开(公告)号：US09414613B2

公开(公告)日：2016-08-16

申请号：US12518519

申请日：2006-12-28

Applicant: Hitoshi Sato ,  Hideaki Ueoka ,  Keiji Shibata

Inventor： Hitoshi Sato ,  Hideaki Ueoka ,  Keiji Shibata

IPC: A23F3/16 ,  A23F3/20 ,  A23F5/24 ,  A23L1/30 ,  A23L2/52

CPC classification number: A23F3/163 ,  A23F3/16 ,  A23F3/20 ,  A23F3/205 ,  A23F5/243 ,  A23L2/52 ,  A23L33/105 ,  A23V2002/00 ,  A23V2200/16 ,  A23V2250/2116

Abstract: This invention relates to a tea extract, which is reduced in bitterness, sourness and coarse taste, has a good affinity with various beverages, and contains non-polymer catechins that are highly stable in a sterilized beverage to which the tea extract is added.A purified tea extract, including: (1) non-polymer catechins (a) in a solid content accounting for from 45 to 90 wt. %; (2) a percentage of gallate body in the non-polymer catechins being from 0.001 to 47 wt. %; and (3) a weight ratio of a gallic acid/the non-polymer catechins being not greater than 0.3.

Abstract translation: 本发明涉及一种减轻苦味，酸味和粗味的茶提取物，与各种饮料具有良好的亲和性，并且含有在加入茶提取物的无菌饮料中高度稳定的非聚合型儿茶素类。 一种纯化茶提取物，包括：（1）固体含量为45〜90重量％的非聚合物儿茶素类（a） ％; （2）非聚合型儿茶素类中没食子酸酯体的百分比为0.001〜47重量％。 ％; 和（3）没食子酸/非聚合型儿茶素类的重量比为0.3以下。

公开(公告)号：US20100021615A1

公开(公告)日：2010-01-28

申请号：US12518519

申请日：2006-12-28

Applicant: Hitoshi Sato ,  Hideaki Ueoka ,  Keiji Shibata

Inventor： Hitoshi Sato ,  Hideaki Ueoka ,  Keiji Shibata

IPC: A23F3/00 ,  A23F3/16 ,  A23L1/28 ,  A23L1/30 ,  A23L2/52

CPC classification number: A23F3/163 ,  A23F3/16 ,  A23F3/20 ,  A23F3/205 ,  A23F5/243 ,  A23L2/52 ,  A23L33/105 ,  A23V2002/00 ,  A23V2200/16 ,  A23V2250/2116

Abstract: This invention relates to a tea extract, which is reduced in bitterness, sourness and coarse taste, has a good affinity with various beverages, and contains non-polymer catechins that are highly stable in a sterilized beverage to which the tea extract is added.A purified tea extract, including:(1) non-polymer catechins (a) in a solid content accounting for from 45 to 90 wt. %;(2) a percentage of gallate body in the non-polymer catechins being from 0.001 to 47 wt. %; and(3) a weight ratio of a gallic acid/the non-polymer catechins being not greater than 0.3.

Abstract translation: 本发明涉及一种减轻苦味，酸味和粗味的茶提取物，与各种饮料具有良好的亲和性，并且含有在加入茶提取物的无菌饮料中高度稳定的非聚合型儿茶素类。 一种纯化茶提取物，包括：（1）固体含量为45〜90重量％的非聚合物儿茶素类（a） ％; （2）非聚合型儿茶素类中没食子酸酯体的百分比为0.001〜47重量％。 ％; 和（3）没食子酸/非聚合型儿茶素类的重量比为0.3以下。

公开(公告)号：US20120121761A1

公开(公告)日：2012-05-17

申请号：US12672302

申请日：2008-08-07

Applicant: Masahiro Fukuda ,  Eri Itaya ,  Hirokazu Takahashi ,  Miwa Ogasawara ,  Hitoshi Sato ,  Kenichi Shikata ,  Keiji Shibata

Inventor： Masahiro Fukuda ,  Eri Itaya ,  Hirokazu Takahashi ,  Miwa Ogasawara ,  Hitoshi Sato ,  Kenichi Shikata ,  Keiji Shibata

IPC: A23F3/22 ,  A23F3/16

CPC classification number: A23F3/163 ,  A23F3/18 ,  A23F3/20

Abstract: This invention relates to a process for producing a tea extract. The process includes subjecting a first tea extract solution, which has been obtained from tea, to solid-liquid separation so that a turbidity becomes 200 NTU or lower when a concentration of non-polymer catechins is adjusted to 1 wt %, thereby obtaining a second tea extract solution in which a concentration of (A) non-polymer catechins is from 0.2 to 5 wt % and a concentration of non-polymer catechins in solid content is from 15 to 80 wt %; and then subjecting the second tea extract solution to a heat treatment at a temperature of from 95 to 140° C. for an F value of from 0.05 to 40 min.

Abstract translation: 本发明涉及茶提取物的制造方法。 该方法包括使得从茶获得的第一茶提取物溶液进行固液分离，使得当非聚合型儿茶素类的浓度调节至1重量％时，浊度变为200NTU或更低，从而获得第二 （A）非聚合型儿茶素类的浓度为0.2〜5重量％，固体成分中的非聚合物儿茶素类的浓度为15〜80重量％的茶提取液， 然后在95〜140℃的温度下对第二茶提取液进行热处理，F值为0.05〜40分钟。

公开(公告)号：US20100278972A1

公开(公告)日：2010-11-04

申请号：US12810477

申请日：2008-12-26

Applicant: Kenichi Shikata ,  Hitoshi Sato ,  Keiji Shibata

Inventor： Kenichi Shikata ,  Hitoshi Sato ,  Keiji Shibata

IPC: A23F3/16

CPC classification number: A23F3/20 ,  A23F3/166

Abstract: A purified tea extract with suppressed bitterness and astringency is economically produced in high yield and high efficiency by dramatically accelerating an enzyme reaction with addition of tannase in a smaller amount. A process of the present invention for the production of a purified tea extract includes a first step which comprises eliminating water-insoluble solids from a first tea extract and then obtaining a second tea extract so that a turbidity falls into a range from 0.1 to 100 NTU when a concentration of the non-polymer catechins is adjusted to 0.7 wt %, and a second step which comprises subjecting the second tea extract at a concentration of the non-polymer catechins of from 0.05 to 4.0 wt % to tannase treatment.

Abstract translation: 具有抑制苦味和涩味的纯化茶提取物通过以较少的量添加鞣酸酶显着加速酶反应而以高产率和高效率经济地产生。 用于生产纯化茶提取物的本发明方法包括：第一步，其包括从第一茶提取物中除去水不溶性固体，然后获得第二茶提取物，使浊度落入0.1至100NTU 当将非聚合型儿茶素类的浓度调整为0.7重量％时，将包含0.05〜4.0重量％的非聚合型儿茶素类的浓度的第二茶提取物进行脱水处理的第二工序。

公开(公告)号：US09060051B2

公开(公告)日：2015-06-16

申请号：US12998530

申请日：2009-11-19

Applicant: Kiichiro Kitamura ,  Hitoshi Sato

Inventor： Kiichiro Kitamura ,  Hitoshi Sato

IPC: E05D11/08 ,  H04M1/02

CPC classification number: H04M1/0216 ,  Y10T16/5385 ,  Y10T16/5387

Abstract: A single-shaft semi-automatic hinge, wherein a first cam and a second cam fitted on the single shaft of the hinge passing therethrough are abutted on each other with pressure application by an elastic member, thereby generating a rotational friction torque; a region of the first cam and the second cam in which a liquid crystal portion can rotate from a state in which a main body portion and the liquid crystal portion are folded to a fully open state is set narrower than a region in which the hinge can rotate.

Abstract translation: 单轴半自动铰链，其中安装在通过其的铰链的单个轴上的第一凸轮和第二凸轮通过弹性构件施加压力而彼此抵靠，从而产生旋转摩擦转矩; 其中液晶部分可以从主体部分和液晶部分折叠到完全打开状态的状态旋转的第一凸轮和第二凸轮的区域被设定为窄于铰链可以 旋转。

公开(公告)号：US09029588B2

公开(公告)日：2015-05-12

申请号：US14128325

申请日：2012-06-21

Applicant: Kenji Yamawaki ,  Yukiteru Sugiyama ,  Hitoshi Sato

Inventor： Kenji Yamawaki ,  Yukiteru Sugiyama ,  Hitoshi Sato

IPC: A61K31/216 ,  A23F5/22 ,  B01J39/04 ,  B01J41/04 ,  B01J47/02 ,  B01J20/20 ,  A61K36/74 ,  C02F1/76 ,  A23L1/30 ,  C07C67/56 ,  C02F1/42

CPC classification number: A61K31/216 ,  A23F5/223 ,  A23L33/105 ,  A61K36/74 ,  B01J20/20 ,  B01J39/05 ,  B01J39/07 ,  B01J41/05 ,  B01J41/07 ,  B01J47/026 ,  C02F1/42 ,  C02F1/76 ,  C07C67/56 ,  C07C2601/14 ,  C07C69/732

Abstract: Provided is a method for producing a chlorogenic acids composition having a reduced caffeine content and good taste and favor, capable of efficiently recovering high purity of chlorogenic acids from a chlorogenic acids-containing composition. The method for producing a purified chlorogenic acids composition comprises a step A of bringing a chlorogenic acids-containing composition into contact with a cation exchange resin; a step B of bringing the liquid obtained in the step A into contact with an anion exchange resin; and a step C of bringing an eluent into contact with the anion exchange resin after the step B.

Abstract translation: 本发明提供了能够有效地从含绿原酸的组合物中回收绿原酸的高纯度的，具有降低的咖啡因含量和良好的味道和有利性的绿原酸组合物的方法。 纯化的绿原酸组合物的制造方法包括使含绿原酸的组合物与阳离子交换树脂接触的工序A; 使步骤A中获得的液体与阴离子交换树脂接触的步骤B; 以及在步骤B之后使洗脱液与阴离子交换树脂接触的步骤C.

公开(公告)号：US20130168833A1

公开(公告)日：2013-07-04

申请号：US13776446

申请日：2013-02-25

Applicant: Hitoshi Sato ,  John F. Kaeding ,  Michael Iza ,  Benjamin A. Haskell ,  Troy J. Baker ,  Steven P. DenBaars ,  Shuji Nakamura

Inventor： Hitoshi Sato ,  John F. Kaeding ,  Michael Iza ,  Benjamin A. Haskell ,  Troy J. Baker ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L29/04 ,  H01L21/02

CPC classification number: H01L29/045 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02365 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262

Abstract: A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

Abstract translation: 通过使用含有至少一些铟的（Al，In，Ga）N成核层，通过金属有机化学气相沉积（MOCVD）增强器件质量的平面半极性半导体薄膜的生长的方法。 具体地，该方法包括将衬底装载到反应器中，在氮气和/或氢气和/或氨气流下加热衬底，在加热衬底上沉积In x Ga 1-x N成核层，在半导体衬底上沉积半极性氮化物半导体薄膜 In x Ga 1-x N成核层，并在氮气过压下冷却该衬底。

公开(公告)号：US20120205625A1

公开(公告)日：2012-08-16

申请号：US13454321

申请日：2012-04-24

Applicant: Michael Iza ,  Hitoshi Sato ,  Eu Jin Hwang ,  Steven P. DenBaars ,  Shuji Nakamura

Inventor： Michael Iza ,  Hitoshi Sato ,  Eu Jin Hwang ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L29/205 ,  H01L21/20

CPC classification number: H01L33/04 ,  H01L33/12 ,  H01L33/32

Abstract: A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN where 0

Abstract translation: 在图案化衬底上的氮化物发光二极管，包括具有In x Ga 1-x N和In y Ga 1-y N的交替层的至少两个周期的氮化物中间层，其中0

公开(公告)号：US08193079B2

公开(公告)日：2012-06-05

申请号：US11673426

申请日：2007-02-09

Applicant: John F. Kaeding ,  Hitoshi Sato ,  Michael Iza ,  Hirokuni Asamizu ,  Hong Zhong ,  Steven P. DenBaars ,  Shuji Nakamura

Inventor： John F. Kaeding ,  Hitoshi Sato ,  Michael Iza ,  Hirokuni Asamizu ,  Hong Zhong ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/04

CPC classification number: H01L21/2654 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/207

Abstract: A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

Abstract translation: （Al，In，Ga，B）N半导体晶体中受控p型导电性的方法。 实例包括在{011}方向沉积在{100} MgAl 2 O 4尖晶石衬底miscut上的{10 11} GaN膜。 可以有意地将Mg原子并入生长的半极性氮化物薄膜中以在半导体晶体的带结构中引入可用的电子态，导致p型导电性。 也可以使用导致类似的合适电子状态引入的其它杂质原子，例如Zn或C。

公开(公告)号：US08148713B2

公开(公告)日：2012-04-03

申请号：US12419119

申请日：2009-04-06

Applicant: Hitoshi Sato ,  Hirohiko Hirasawa ,  Roy B. Chung ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

Inventor： Hitoshi Sato ,  Hirohiko Hirasawa ,  Roy B. Chung ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L29/06

CPC classification number: H01L33/32 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L33/02 ,  H01L33/08 ,  Y10S977/755

Abstract: A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.