摘要:
A film deposition apparatus has a vacuum chamber in which a turntable placing plural substrates is rotated, the plural substrates come into contact with plural reaction gases supplied to plural process areas and thin films are deposited on surfaces of the plural substrates, and has plural reaction gas supplying portions for supplying the plural processing gases, a separation gas supplying portion for supplying a separation gas and an evacuation mechanism for ejecting the plural processing gases and the separation gas, wherein the plural process areas includes a first process area for causing a first reaction gas to adsorb on the surfaces of the plural substrates, and a second process area, having an area larger than the first process area, for causing the first reaction gas having adsorbed the surfaces of the plural substrates and a second reaction gas to react, and depositing the films on the surfaces of the plural substrates.
摘要:
A substrate position detection method includes rotating the susceptor so that the substrate receiving portion is moved into an image taking area of a imaging apparatus; detecting first two position detection marks provided in the process chamber so that the first two position detection marks are within the image taking area, wherein a first perpendicular bisector of the first two position detection marks passes through a rotational center of the susceptor; detecting second two position detection marks provided in the susceptor so that the second two position detection marks can be within the image taking area, wherein a second perpendicular bisector of the second two position detection marks passes through the rotational center of the susceptor and a center of the substrate receiving portion; and determining whether the substrate receiving portion is positioned in a predetermined range in accordance with the detected first two and second two position detection marks.
摘要:
A film deposition apparatus includes processing areas spaced part from each other in a circumferential direction and at least one separation gas nozzle arranged between the process areas, and separates the process areas from each other by supplying a separation gas from the separation gas nozzle. Moreover, a first ceiling surface is provided on the downstream side in a rotational direction of the turntable relative to the separation gas nozzle to form a narrow space between an upper surface of the turntable and a lower surface of the first ceiling surface. Furthermore, a second ceiling surface higher than the first ceiling surface is provided on the upstream side in the rotational direction of the turntable.