公开(公告)号：US12199141B2

公开(公告)日：2025-01-14

申请号：US17912243

申请日：2021-03-12

Applicant: Hitachi Energy Ltd

Inventor： Wolfgang Amadeus Vitale ,  Luca De-Michielis ,  Boni Kofi Boksteen ,  Elizabeth Buitrago ,  Maxi Andenna

IPC: H01L29/861 ,  H01L21/265 ,  H01L21/266 ,  H01L29/06 ,  H01L29/66

Abstract: A semiconductor device a first semiconductor layer of a first conductivity type at a first main side of a semiconductor wafer and a second semiconductor layer of a second conductivity type at second main side. The second semiconductor layer forms a pn junction with the first semiconductor layer. A first electrode is in ohmic contact with the first semiconductor layer and a second electrode layer is in ohmic contact with the second semiconductor layer. A first semiconductor region of the first conductivity type completely embedded in the second semiconductor layer and a second semiconductor region of the first conductivity type completely embedded in the second semiconductor layer.