公开(公告)号：US20030146760A1

公开(公告)日：2003-08-07

申请号：US10382929

申请日：2003-03-07

申请人： Hitachi, Ltd.

发明人： Nobuyoshi Kogawa ,  Hiroshi Kitaguchi ,  Tetsuya Matsui ,  Akihisa Kaihara ,  Junichi Arita

IPC分类号： G01N027/62

CPC分类号： G01T1/24

摘要： A highly sensitive charged particle measuring device capable of measuring low-level alpha rays comprises in a measurement chamber 7 provided with a sealable door 15, a test sample 2 and a semiconductor detector 1, a radiation measuring circuit 30 including a preamplifier 30c connected to the semiconductor detector 1, a linear amplifier 30d, and a pulse height analyzer 30e, a charged particle emission amount arithmetic unit 40 for performing the quantitative analysis of charged particles from its measurement, a display unit for displaying its analysis result, and further has an evacuation pipe line and a pure gas supply pipe line for performing supply and replacement of the pure gas in the measuring chamber 7.

公开(公告)号：US20020105070A1

公开(公告)日：2002-08-08

申请号：US10046258

申请日：2002-01-16

申请人： Hitachi, Ltd.

发明人： Masanori Shibamoto ,  Masahiro Ichitani ,  Ryo Haruta ,  Katsuyuki Matsumoto ,  Junichi Arita ,  Ichiro Anjo

IPC分类号： H01L023/34

CPC分类号： H01L24/50 ,  H01L23/13 ,  H01L23/16 ,  H01L23/24 ,  H01L23/293 ,  H01L23/3128 ,  H01L23/34 ,  H01L23/36 ,  H01L23/3672 ,  H01L23/3675 ,  H01L23/3732 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/3737 ,  H01L23/49572 ,  H01L23/49816 ,  H01L23/4985 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29144 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/73269 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/0105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2224/45099

摘要： A semiconductor device in which a semiconductor chip 1 is bonded by a metal bond 2 to one surface of a heat sink 4 formed of a material with a thermal expansion coefficient is close to he semiconductor chip 1, the heat sink 4 is glued to a stiffener with a silicon adhesive 5 with an elastic modulus of 10 MPa or less, a TAB tape 9 is glued to the stiffener 3 with an epoxy adhesive 6, and the semiconductor chip 1 is sealed with an epoxy sealing resin 8 with an elastic modulus of 10 GPa or more for protection from outside.

摘要翻译： 其中半导体芯片1通过金属接合2接合到由具有热膨胀系数的材料形成的散热器4的一个表面接近半导体芯片1的半导体器件，散热器4被胶合到加强件 使用弹性模量为10MPa以下的硅粘合剂5，用环氧树脂粘合剂6将TAB带9胶合到加强件3，并用环氧树脂密封树脂8密封弹性模量为10的半导体芯片1 GPa或更多用于保护外部。

公开(公告)号：US20020074656A1

公开(公告)日：2002-06-20

申请号：US09988684

申请日：2001-11-20

申请人： Hitachi, Ltd.

发明人： Kenji Ujiie ,  Kenichi Yamamoto ,  Junichi Arita

IPC分类号： H01L023/52 ,  H01L021/44 ,  H01L023/48 ,  H01L029/40

CPC分类号： H01L24/16 ,  H01L23/3107 ,  H01L23/53228 ,  H01L23/556 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/45 ,  H01L24/81 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/15311 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/48

摘要： For preventing null-rays induced soft errors in a semiconductor device in which solder bumps are connected with Cu wirings formed on Al wirings, bump lands connected with solder bumps and Cu wirings connected integrally therewith are constituted of a stacked film of a Cu film and an Ni film formed thereon, the thickness of the stacked film is larger than the thickness of the photosensitive polyimide resin film, the thickness of the inorganic passivation film, the thickness of the third Al wiring layer and the bonding pad and the thickness of the second interlayer insulative film formed below the Cu wirings and the bump land, that is, the bump land being constituted with such a thickness as larger than any of the thickness for the insulation material and the wiring material interposed between the MISFET (n-channel MISFET and p-channel MISFET) constituting the memory cell and the bump land.

摘要翻译： 为了防止在焊料凸块与形成在Al布线上的Cu布线连接的半导体器件中的α射线引起的软错误，与焊料凸块连接的凸起焊盘和与其一体连接的Cu布线由Cu膜和 形成在其上的Ni膜，层叠膜的厚度大于光敏聚酰亚胺树脂膜的厚度，无机钝化膜的厚度，第三Al布线层和接合焊盘的厚度以及第二夹层的厚度 形成在Cu配线和凸块焊盘之下的绝缘膜，即，凸起焊盘的面积大于绝缘材料的厚度以及布置在MISFET（n沟道MISFET和p 沟道MISFET）构成存储单元和凸起区域。

公开(公告)号：US20030030444A1

公开(公告)日：2003-02-13

申请号：US10084068

申请日：2002-02-28

申请人： Hitachi, Ltd.

发明人： Nobuyoshi Kogawa ,  Hiroshi Kitaguchi ,  Tetsuya Matsui ,  Akihisa Kaihara ,  Junichi Arita

IPC分类号： G01N027/62

CPC分类号： G01T1/24

摘要： A highly sensitive charged particle measuring device capable of measuring low-level alpha rays comprises in a measurement chamber 7 provided with a sealable door 15, a test sample 2 and a semiconductor detector 1, a radiation measuring circuit 30 including a preamplifier 30c connected to the semiconductor detector 1, a linear amplifier 30d, and a pulse height analyzer 30e, a charged particle emission amount arithmetic unit 40 for performing the quantitative analysis of charged particles from its measurement, a display unit for displaying its analysis result, and further has an evacuation pipe line and a pure gas supply pipe line for performing supply and replacement of the pure gas in the measuring chamber 7.

公开(公告)号：US20020066955A1

公开(公告)日：2002-06-06

申请号：US10046204

申请日：2002-01-16

申请人： Hitachi, Ltd.

发明人： Masanori Shibamoto ,  Masahiro Ichitani ,  Ryo Haruta ,  Katsuyuki Matsumoto ,  Junichi Arita ,  Ichiro Anjo

IPC分类号： H01L023/34

CPC分类号： H01L24/50 ,  H01L23/13 ,  H01L23/16 ,  H01L23/24 ,  H01L23/293 ,  H01L23/3128 ,  H01L23/34 ,  H01L23/36 ,  H01L23/3672 ,  H01L23/3675 ,  H01L23/3732 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/3737 ,  H01L23/49572 ,  H01L23/49816 ,  H01L23/4985 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29144 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/73269 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/0105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2224/45099

摘要： A semiconductor device in which a semiconductor chip 1 is bonded by a metal bond 2 to one surface of a heat sink 4 formed of a material with a thermal expansion coefficient is close to he semiconductor chip 1, the heat sink 4 is glued to a stiffener with a silicon adhesive 5 with an elastic modulus of 10 MPa or less, a TAB tape 9 is glued to the stiffener 3 with an epoxy adhesive 6, and the semiconductor chip 1 is sealed with an epoxy sealing resin 8 with an elastic modulus of 10 GPa or more for protection from outside.