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公开(公告)号：US5643650A
公开(公告)日：1997-07-01
申请号：US496256
申请日：1995-06-28
IPC分类号： G11B11/105 , G11B5/66
CPC分类号： G11B11/10591 , G11B11/10584 , G11B11/10586 , Y10S428/90
摘要： The recording sensitivity can be improved of a magneto-optical recording medium having a laminar structure consisting of a first dielectric layer, a recording layer, a second dielectric layer and reflecting layer successively formed on a transparent substrate plate by forming the reflecting layer from an alloy consisting of aluminum and from 0.05 to 3 atomic % of a rare earth element such as neodymium and gadolinium in place of pure aluminum as in conventional magneto-optical recording media.
摘要翻译： 通过从合金形成反射层，可以提高具有由第一电介质层，记录层，第二电介质层和反射层组成的层状结构的磁光记录介质的记录灵敏度 由铝和0.05〜3原子％的稀土元素如钕和钆代替纯铝如常规磁光记录介质。
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公开(公告)号：US5554303A
公开(公告)日：1996-09-10
申请号：US397564
申请日：1995-03-02
CPC分类号： G11B5/8404
摘要： An improvement is proposed in the method for the preparation of a magnetic recording medium by forming a magnetic recording layer of a magnetic alloy on the surface of a non-magnetic substrate plate of, e.g., silicon so as to impart the magnetic recording medium with improved CSS (contact-start-stop) characteristics still without affecting the magnetic recording density. The improvement can be obtained by subjecting the surface of the substrate plate, prior to the formation of the magnetic recording layer, to a surface-roughening treatment which is performed either by a dry-process such as plasma etching and reactive ion etching or by a wet-process of anisotropic etching by using an aqueous solution of sodium or potassium hydroxide as the anisotropic etching solution. In particular, the plasma etching or reactive ion etching is conducted in the presence of a particulate scattering source body of aluminum, etc. placed in the vicinity of the CSS zone so that the surface-roughening effect is limited to the CSS zone by the deposition of particulates scattered therefrom leaving the recording zone unroughened not to decrease the recording density.
摘要翻译： 通过在例如硅的非磁性基板的表面上形成磁性合金的磁记录层，在制备磁记录介质的方法中提出了一种改进，以使磁记录介质具有改进的 CSS（接触开始 - 停止）特性仍然不影响磁记录密度。 可以通过在形成磁记录层之前将基板的表面进行表面粗糙化处理来获得改进，所述表面粗糙化处理通过诸如等离子体蚀刻和反应离子蚀刻之类的干法进行，或通过 通过使用氢氧化钠或氢氧化钾的水溶液作为各向异性蚀刻溶液进行各向异性蚀刻的湿法。 特别地，等离子体蚀刻或反应离子蚀刻在放置在CSS区域附近的铝等微粒散射源体的存在下进行，使得表面粗糙化效果通过沉积被限制到CSS区域 从而离开记录区未变粗糙的颗粒不会降低记录密度。
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公开(公告)号：US5720861A
公开(公告)日：1998-02-24
申请号：US516046
申请日：1995-08-17
申请人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara
发明人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara
CPC分类号： G11B5/7315 , G11B5/851
摘要： An improvement is proposed in the method for the preparation of a magnetic recording medium comprising a non-magnetic substrate plate of silicon and a magnetic recording layer formed on the substrate surface by the method of bias-sputtering, by which the magnetic recording layer can be imparted with an unexpectedly large coercive force. The improvement can be accomplished by the use of a silicon substrate plate which has a volume resistivity not exceeding 2 ohm-cm at room temperature. The improvement is more remarkable when the contact resistance between the silicon substrate plate and the substrate holder is kept not to exceed 10 kohm during the bias-sputtering for the formation of the magnetic recording layer on the substrate surface.
摘要翻译： 在通过偏置溅射的方法制备磁记录介质的方法中提出了一种磁记录介质的方法，所述磁记录介质包括硅非磁性基板和形成在基板表面上的磁记录层，通过该方法磁记录层可以 赋予了意想不到的大矫顽力。 可以通过使用在室温下体积电阻率不超过2欧姆 - 厘米的硅衬底板来实现改进。 当在衬底表面上形成磁记录层的偏压溅射期间，当硅衬底板和衬底保持器之间的接触电阻保持不超过10Kohm时，这种改进是更显着的。
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公开(公告)号：US5582897A
公开(公告)日：1996-12-10
申请号：US365207
申请日：1994-12-28
申请人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara
发明人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara
CPC分类号： G11B5/7315 , Y10S428/90 , Y10S428/928 , Y10T428/12465 , Y10T428/24355
摘要： Proposed is a magnetic recording medium consisting of a non-magnetic substrate and a magnetic recording layer formed thereon by the sputtering method, in which the non-magnetic substrate is a disk of single crystal silicon having a surface substantially in parallel with the crystallographic (111) plane with an angle of deviation not exceeding 15.degree., of which the surface roughness Rp does not exceed 25 nm. By virtue of the use of the unique material for the substrate, the magnetic recording layer is outstandingly stable as compared with conventional aluminum or glass substrates and the magnetic layer formed thereon by sputtering has a greatly improved coercive force of 1300 oersted or higher.
摘要翻译： 提出了由非磁性基板和通过溅射法在其上形成的磁记录层构成的磁记录介质，其中非磁性基板是具有与晶体学（111）基本上平行的表面的单晶硅盘 ）平面，其偏转角不超过15°，其表面粗糙度Rp不超过25nm。 由于使用独特材料作为基板，所以与常规的铝或玻璃基板相比，磁记录层非常稳定，并且通过溅射在其上形成的磁性层的矫顽力大大提高了1300奥斯特或更高。
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公开(公告)号：US5591502A
公开(公告)日：1997-01-07
申请号：US348342
申请日：1994-12-02
申请人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara
发明人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara
CPC分类号： G11B5/7315 , G11B5/8404 , Y10S428/90 , Y10T428/12854 , Y10T428/265
摘要： Proposed is a magnetic recording medium consisting of a non-magnetic substrate and a magnetic recording layer formed thereon by the method of sputtering, in which the non-magnetic substrate is a disk of single crystal silicon having a surface of the crystallographic orientation of (100), the surface roughness Rp being 40 nm or smaller. By virtue of the use of the unique material for the substrate, the magnetic recording layer is outstandingly stable as compared with conventional aluminum or glass substrates and the magnetic layer formed thereon by sputtering has a greatly improved coercive force of 1300 oersted or higher.
摘要翻译： 提出了一种由非磁性基板和通过溅射方法在其上形成的磁记录层组成的磁记录介质，其中非磁性基板是晶体取向面为（100）的单晶硅盘 ），表面粗糙度Rp为40nm以下。 由于使用独特材料作为基板，所以与常规的铝或玻璃基板相比，磁记录层非常稳定，并且通过溅射在其上形成的磁性层的矫顽力大大提高了1300奥斯特或更高。
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公开(公告)号：US5514468A
公开(公告)日：1996-05-07
申请号：US145173
申请日：1993-11-03
IPC分类号： G11B11/105 , B32B3/02 , B32B5/16 , G11B5/66
CPC分类号： G11B11/10584 , G11B11/10593 , Y10S428/90 , Y10T428/26 , Y10T428/265
摘要： A magneto-optical recording medium having a layered structure consisting of a first dielectric layer, magnetic recording layer, second dielectric layer and reflecting layer successively formed on a transparent substrate plate can be imparted with improved performance relative to the recording sensitivity and the C/N ratio when the recording layer and the second dielectric layer each have such a thickness that the angle .delta. given by the equation .delta.=tan.sup.-1 (.epsilon./.theta.k), in which .epsilon. is the Kerr ellipticity of the regenerative light and .theta.k is the Kerr rotation angle, does not exceed 10.degree., the thickness of the recording layer being in the range from 8 nm to 13.5 nm and the thickness of the second dielectric layer satisfying the relationship given by the inequality0.06.ltoreq.nd/.lambda..ltoreq.0.14,in which d is the thickness of the second dielectric layer, .lambda. is the wavelength of the regenerative light for reading-out of the recorded signals and n is the refractive index of the material forming the second dielectric layer to the regenerative light of wavelength .lambda..
摘要翻译： 具有由第一电介质层，磁记录层，第二电介质层和连续形成在透明基板上的反射层组成的层状结构的磁光记录介质可以相对于记录灵敏度和C / N 当记录层和第二介电层各自具有这样的厚度，即由等式delta = tan-1（epsilon /θk）给出的角度δ，其中ε是再生光的Kerr椭圆率和θk是 克尔旋转角不超过10°，记录层的厚度在8nm至13.5nm的范围内，第二介电层的厚度满足不等式0.06
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7.发明授权Sputtering target material, silicon-containing film forming method, and photomask blank 有权溅射靶材料，含硅膜形成方法和光掩模坯料公开(公告)号：US08647795B2
公开(公告)日：2014-02-11
申请号：US13273656
申请日：2011-10-14
申请人： Hideo Kaneko , Yokio Inazuki , Hiroki Yoshikawa
发明人： Hideo Kaneko , Yokio Inazuki , Hiroki Yoshikawa
CPC分类号： C23C14/3414 , C23C14/0036 , C23C14/0676 , C23C14/564 , G03F1/54
摘要： Provided is a silicon target material in which particles are not easily generated during a sputtering process and to form a low-defect (high quality) silicon-containing film. A silicon target material having a specific resistance of 20 Ω·cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials according to the present invention may be used for sputtering film formation of the silicon-containing film.
摘要翻译： 提供了一种硅靶材料，其中在溅射工艺期间不容易产生颗粒并形成低缺陷（高质量）含硅膜。 使用在室温下电阻率为20Ω·cm以上的硅靶材料来形成含硅膜。 硅靶材料可以是多晶的或非晶的。 然而，当硅靶材料是单晶时，可以获得更稳定的放电状态。 此外，由于其含氧量低，因此通过FZ法生长晶体的单晶硅是优选的高纯度硅靶材料。 此外，优选具有n型导电性且含有供体杂质的靶材料，以获得稳定的放电特性。 根据本发明，只有一种或多种硅靶材料可用于溅射含硅膜的成膜。
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公开(公告)号：US08309277B2
公开(公告)日：2012-11-13
申请号：US12813137
申请日：2010-06-10
IPC分类号： G03F1/50
摘要： A photomask is manufactured from a photomask blank comprising a transparent substrate and a light-shielding film consisting of upper and lower layers of transition metal-containing silicon base materials, the content of O+N in the upper layer being higher than that of the lower layer. The light-shielding film is processed in two steps by fluorine dry etching through a resist pattern such that a lower portion of the film is left behind, and oxygen-containing chlorine dry etching for removing the remainder of the film.
摘要翻译： 光掩模由包括透明基板和由含过渡金属的硅基材料的上层和下层组成的遮光膜的光掩模坯料制造，上层中的O + N的含量高于下层的含量 层。 遮光膜通过氟干蚀刻通过抗蚀剂图案进行两步加工，使得膜的下部留下，并且含氧氯干蚀刻用于除去膜的其余部分。
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9.发明授权Method for inspecting photomask blank or intermediate thereof, method for determining dosage of high-energy radiation, and method for manufacturing photomask blank 有权检查光掩模坯料或其中间体的方法，用于确定高能辐射剂量的方法，以及制造光掩模坯料的方法公开(公告)号：US08168351B2
公开(公告)日：2012-05-01
申请号：US12750121
申请日：2010-03-30
申请人： Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
发明人： Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
CPC分类号： G03F1/84 , G03F7/70783
摘要： A photomask blank which is manufactured by depositing a phase shift film on a substrate and irradiating the phase shift film with high-energy radiation to effect substrate shape adjusting treatment is inspected by measuring a surface topography of the photomask blank after the substrate shape adjusting treatment, removing the phase shift film from the photomask blank, measuring a surface topography of the treated substrate after removal of the phase shift film, and comparing the surface topographies, thereby evaluating a warpage change before and after removal of the phase shift film, due to a stress of the phase shift film having undergone substrate shape adjusting treatment.
摘要翻译： 通过在基板形状调整处理之后测量光掩模坯料的表面形貌来检查通过在基板上沉积相变膜并用高能辐射照射相移膜来进行基板形状调整处理而制造的光掩模坯料， 从光掩模坯料中去除相移膜，在移除相移膜之后测量处理过的基板的表面形貌，并比较表面形貌，由此评估在移相膜之前和之后的翘曲变化，由于 经过衬底形状调整处理的相移膜的应力。
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公开(公告)号：US07179567B2
公开(公告)日：2007-02-20
申请号：US10606894
申请日：2003-06-27
申请人： Yukio Inazuki , Masayuki Nakatsu , Tsuneo Numanami , Atsushi Tajika , Hideo Kaneko , Satoshi Okazaki
发明人： Yukio Inazuki , Masayuki Nakatsu , Tsuneo Numanami , Atsushi Tajika , Hideo Kaneko , Satoshi Okazaki
IPC分类号： G03F1/00
摘要： In a phase shift mask blank comprising a transparent substrate and a phase shift film thereon, after the phase shift film is formed on the substrate, it is surface treated with ozone water having an ozone concentration of at least 1 ppm. The resulting phase shift film is of quality in that it experiences minimized changes of phase difference and transmittance upon immersion in chemical liquid during subsequent mask cleaning step or the like.
摘要翻译： 在包括透明基板和相移膜的相移掩模坯料中，在基板上形成相移膜之后，用臭氧浓度为至少1ppm的臭氧水进行表面处理。 所得到的相移膜的质量在于，在随后的掩模清洁步骤等期间，其经历了在浸入化学液体中时相位差和透射率的最小化变化。
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