公开(公告)号：US20120312227A1

公开(公告)日：2012-12-13

申请号：US13157899

申请日：2011-06-10

Applicant: Hexiang ZHU ,  Karl PEARSON

Inventor： Hexiang ZHU ,  Karl PEARSON

IPC: C30B35/00 ,  C30B1/02

CPC classification number: B01J3/062 ,  B01J3/067 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068 ,  C30B29/04 ,  Y10T117/10

Abstract: Disclosed herein is an apparatus and method for growing a diamond. The apparatus for growing a diamond comprises: a reaction cell that is configured to grow the diamond therein; a main heater including a main heating surface that is arranged along a first inner surface of the reaction cell; and a sub-heater including a sub-heating surface that is arranged along a second inner surface of the reaction cell, the second inner surface being non-parallel with the first inner surface.

Abstract translation: 本文公开了一种用于生长钻石的装置和方法。 用于生长钻石的装置包括：构造成在其中生长钻石的反应池; 主加热器，包括沿着反应池的第一内表面布置的主加热表面; 以及副加热器，其包括沿着所述反应池的第二内表面配置的副加热面，所述第二内表面与所述第一内表面不平行。

公开(公告)号：US20130160700A1

公开(公告)日：2013-06-27

申请号：US13332636

申请日：2011-12-21

Applicant: Joo Ro KIM ,  Hexiang ZHU ,  Karl PEARSON

Inventor： Joo Ro KIM ,  Hexiang ZHU ,  Karl PEARSON

IPC: C30B9/00

CPC classification number: B01J3/062 ,  B01J3/067 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068

Abstract: Disclosed is a method of growing a diamond, including the steps of providing a diamond seed in a reaction chamber; providing a protective layer above the diamond seed; providing a catalyst above the protective layer; providing a carbon source above the catalyst; applying pressure to the reaction chamber; heating the catalyst to a first temperature; holding the first temperature for a first duration; heating the catalyst to a second temperature; and holding the second temperature for a second duration.

Abstract translation: 公开了一种生长金刚石的方法，包括在反应室中提供金刚石晶种的步骤; 在金刚石种子上提供保护层; 在保护层上方提供催化剂; 在催化剂上方提供碳源; 向反应室施加压力; 将催化剂加热至第一温度; 持有第一个温度第一个持续时间; 将催化剂加热至第二温度; 并保持第二温度持续第二个持续时间。

公开(公告)号：US20110126759A1

公开(公告)日：2011-06-02

申请号：US13016509

申请日：2011-01-28

Applicant: Robert CHODELKA ,  Hexiang ZHU ,  Alexander NOVIKOV

Inventor： Robert CHODELKA ,  Hexiang ZHU ,  Alexander NOVIKOV

IPC: C30B23/00

CPC classification number: B30B11/004 ,  B01J3/065 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068 ,  B30B11/007 ,  C01B32/25 ,  Y10T117/1004

Abstract: An apparatus for growing a synthetic diamond comprises a growth chamber, at least one manifold allowing access to the growth chamber, and a plurality of safety clamps positioned on opposite sides of the growth chamber; wherein the growth chamber and the plurality of safety clamps are comprised of a material having a tensile strength of about 120,000-200,000 psi, a yield strength of about 100,000-160,000 psi, an elongation of about 10-20%, an area reduction of about 40-50%, an impact strength of about 30-40 ft-lbs, and a hardness greater than 320 BHN.

Abstract translation: 用于生长合成金刚石的装置包括生长室，允许进入生长室的至少一个歧管和位于生长室的相对侧上的多个安全夹具; 其中所述生长室和所述多个安全夹具由抗拉强度为约120,000-200,000psi，屈服强度为约100,000-160,000psi，伸长率为约10-20％，面积减小约为 40-50％，冲击强度约30-40ft-lbs，硬度大于320 BHN。