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    Durable glass housings/enclosures for electronic devices
    6.
    发明授权
    Durable glass housings/enclosures for electronic devices 失效
    耐用玻璃外壳/电子设备外壳

    公开(公告)号：US08187987B2

    公开(公告)日：2012-05-29

    申请号：US12545475

    申请日：2009-08-21

    申请人： Jaymin Amin ,  Matthew John Dejneka ,  Linda Ruth Pinckney ,  Katherine Rose Rossington ,  Robert Sabia

    发明人： Jaymin Amin ,  Matthew John Dejneka ,  Linda Ruth Pinckney ,  Katherine Rose Rossington ,  Robert Sabia

    IPC分类号： C03C3/085 ,  C03C3/091 ,  C03C3/087 ,  C03C3/078 ,  C03C15/00

    CPC分类号： C03C21/002 ,  C03C3/083 ,  C03C3/087 ,  C03C3/091 ,  C03C3/093 ,  Y10T428/131 ,  Y10T428/24355 ,  Y10T428/265

    摘要： The invention relates to glass articles suitable for use as electronic device housing/enclosure or protective cover which comprise a glass material. Particularly, a housing/enclosure/cover comprising an ion-exchanged glass exhibiting the following attributes (1) radio, and microwave frequency transparency, as defined by a loss tangent of less than 0.03 and at a frequency range of between 15 MHz to 3.0 GHz; (2) infrared transparency; (3) a fracture toughness of greater than 0.6 MPa·m1/2; (4) a 4-point bend strength of greater than 350 MPa; (5) a Vickers hardness of at least 450 kgf/mm2 and a Vickers median/radial crack initiation threshold of at least 5 kgf, (6) a Young's Modulus ranging between about 50 to 100 GPa; (7) a thermal conductivity of less than 2.0 W/m° C., and (9) and at least one of the following attributes: (i) a compressive surface layer having a depth of layer (DOL) greater and a compressive stress greater than 400 MPa, or, (ii) a central tension of more than 20 MPa.

    摘要翻译： 本发明涉及适合用作电子设备外壳/外壳或包括玻璃材料的保护罩的玻璃制品。 特别地，包括离子交换玻璃的外壳/外壳/盖，其具有以下属性（1）无线电和微波频率透明度，其由小于0.03的损耗角正切和在15MHz至3.0GHz之间的频率范围 ; （2）红外透明度; （3）断裂韧性大于0.6 MPa·m1 / 2; （4）大于350MPa的4点弯曲强度; （5）维氏硬度至少为450kgf / mm 2，维氏中值/径向裂纹起始阈值为至少5kgf，（6）杨氏模量在约50至100GPa之间; （7）小于2.0W / m℃的热导率和（9）和以下属性中的至少一个：（i）具有更深的层（DOL）的压缩表面层和压缩应力 大于400MPa，或（ii）大于20MPa的中心张力。

    SUBSTRATE COMPOSITIONS AND METHODS FOR FORMING SEMICONDUCTOR ON INSULATOR DEVICES
    8.
    发明申请
    SUBSTRATE COMPOSITIONS AND METHODS FOR FORMING SEMICONDUCTOR ON INSULATOR DEVICES 有权
    用于形成绝缘体器件上的半导体的衬底组合物和方法

    公开(公告)号：US20100224954A1

    公开(公告)日：2010-09-09

    申请号：US12682842

    申请日：2008-10-28

    申请人： Kishor Purushottam Gadkaree ,  Matthew John Dejneka ,  Adam James Ellison

    发明人： Kishor Purushottam Gadkaree ,  Matthew John Dejneka ,  Adam James Ellison

    IPC分类号： H01L29/02 ,  H01L21/762

    CPC分类号： H01L21/187

    摘要： Methods and apparatus for producing a semiconductor on insulator structure include: subjecting an implantation surface of a donor single crystal semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis, wherein a liquidus viscosity of the glass substrate is about 100,000 Poise or greater.

    摘要翻译： 用于制造绝缘体上半导体结构的方法和装置包括：使施主单晶半导体晶片的注入表面进行离子注入工艺以产生施主半导体晶片的剥离层; 使用电解将剥离层的注入表面粘合到玻璃基板上，其中玻璃基板的液相线粘度为约100,000泊或更大。