公开(公告)号：US20230276636A1

公开(公告)日：2023-08-31

申请号：US18311598

申请日：2023-05-03

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Jeffrey Junhao XU ,  Weiliang JING ,  Sitong BU ,  Yichen FANG ,  Ying WU ,  Zhaozhao HOU ,  Wanliang TAN ,  Heng ZHANG ,  Yu ZHANG

IPC: H10B53/30 ,  H10B53/20

CPC classification number: H10B53/30 ,  H10B53/20

Abstract: Example ferroelectric memories and storage devices are described One example ferroelectric memory includes at least one bit cell. A bit cell in the at least one bit cell includes a plurality of ferroelectric capacitors and a first transistor. The first transistor includes a first gate, a first channel, a first source, and a first drain. The first source and the first drain are located at two ends of the first channel. One electrode of each of the plurality of ferroelectric capacitors is formed on the first gate.