公开(公告)号：US20210098691A1

公开(公告)日：2021-04-01

申请号：US17120667

申请日：2020-12-14

Applicant: Huawei Technologies Co., Ltd.

Inventor： Wen Yang ,  Yanxiang Liu

IPC: H01L43/02 ,  H01L27/22

Abstract: This application provides a memory including a transistor and an MTJ storage element; a bottom electrode of the MTJ storage element is electrically connected to a drain electrode of the transistor by using a conduction structure; wiring layers are disposed between the transistor and the MTJ storage element in the storage area, and a dielectric layer is filled between adjacent wiring layers; the conduction structure includes a first conduction part, and the first conduction part includes a first metal wire, a second metal wire, and a first via hole; the wiring layers comprise a first wiring layer, a second wiring layer, and a third wiring layer; the first via hole penetrates a dielectric layer and the third wiring layer that are located between the first wiring layer and the second wiring layer.

公开(公告)号：US12079472B2

公开(公告)日：2024-09-03

申请号：US17732675

申请日：2022-04-29

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Bang Liu ,  Liyu Wang ,  Kun Guan ,  Wen Yang ,  Jianqiang Shen

IPC: G06F3/06

CPC classification number: G06F3/0608 ,  G06F3/064 ,  G06F3/0671

Abstract: A data reduction method, apparatus, and computing device and a storage medium are provided. The method includes: when reduction is to be performed on a to-be-reduced data block, obtaining a fingerprint of the to-be-reduced data block; forming an index set based on the fingerprint of the to-be-reduced data block by using index information of data blocks with identical fingerprints; and performing, in the to-be-reduced data block based on the fingerprint of the to-be-reduced data block, data reduction processing on a data block to which index information in a same index set belongs.

公开(公告)号：US11957062B2

公开(公告)日：2024-04-09

申请号：US17120667

申请日：2020-12-14

Applicant: Huawei Technologies Co., Ltd.

Inventor： Wen Yang ,  Yanxiang Liu

IPC: H01L43/02 ,  H01L27/22 ,  H10B61/00 ,  H10N50/80

CPC classification number: H10N50/80 ,  H10B61/22

Abstract: A memory includes a transistor and a magnetic tunnel junction (MTJ) storage element, a bottom electrode of the MTJ storage element is electrically connected to a drain electrode of the transistor using a conduction structure, wiring layers are disposed between the transistor and the MTJ storage element in the storage area, and a dielectric layer is filled between adjacent wiring layers, the conduction structure includes a first conduction part, and the first conduction part includes a first metal wire, a second metal wire, and a first via hole, the wiring layers comprise a first wiring layer, a second wiring layer, and a third wiring layer, the first via hole penetrates a dielectric layer and the third wiring layer that are located between the first wiring layer and the second wiring layer.

公开(公告)号：US20240020005A1

公开(公告)日：2024-01-18

申请号：US18475849

申请日：2023-09-27

Applicant: Huawei Technologies Co., Ltd.

Inventor： Bang Liu ,  Kai Zhu ,  Ke Li ,  Wen Yang ,  Jianqiang Shen

IPC: G06F3/06

CPC classification number: G06F3/0608 ,  G06F3/0641 ,  G06F3/0673

Abstract: A data compression method includes providing one or more data block sets, where each data block set includes a plurality of data blocks with a same fingerprint; providing one or more compression groups based on a similarity degree between a plurality of data blocks included in each data block set, where one compression group includes a plurality of similar data blocks, the plurality of similar data blocks are a subset of data blocks included in the one or more data block sets, and a similarity degree between the plurality of similar data blocks meets a specific similarity condition; and compressing the plurality of similar data blocks included in the compression group.

公开(公告)号：US11088032B2

公开(公告)日：2021-08-10

申请号：US16239401

申请日：2019-01-03

Applicant: Huawei Technologies Co., Ltd.

Inventor： Wen Yang ,  Riqing Zhang ,  Yu Xia

IPC: H01L21/8238 ,  H01L29/778 ,  H01L21/265 ,  H01L29/739 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L27/092 ,  H01L29/24

Abstract: In embodiments of the present disclosure, an ambient medium of a two-dimensional semiconductor is doped or an ambient medium of a semiconductor is locally filled with a solid material, to form a filled region, and an electronic device based on the two-dimensional semiconductor is implemented by means of a doping effect of the doped region or the filled region on a characteristic of the two-dimensional semiconductor. In the embodiments of the present disclosure, doping the two-dimensional semiconductor is not directly processing the two-dimensional semiconductor. Therefore, damage caused to the two-dimensional semiconductor in a doping process and device performance deterioration caused accordingly can be effectively reduced, and stability of device performance after doping is improved.

公开(公告)号：US20190139835A1

公开(公告)日：2019-05-09

申请号：US16239401

申请日：2019-01-03

Applicant: Huawei Technologies Co., Ltd.

Inventor： Wen Yang ,  Riqing Zhang ,  Yu Xia

IPC: H01L21/8238 ,  H01L21/265 ,  H01L27/092 ,  H01L21/02

Abstract: In embodiments of the present disclosure, an ambient medium of a two-dimensional semiconductor is doped or an ambient medium of a semiconductor is locally filled with a solid material, to form a filled region, and an electronic device based on the two-dimensional semiconductor is implemented by means of a doping effect of the doped region or the filled region on a characteristic of the two-dimensional semiconductor. In the embodiments of the present disclosure, doping the two-dimensional semiconductor is not directly processing the two-dimensional semiconductor. Therefore, damage caused to the two-dimensional semiconductor in a doping process and device performance deterioration caused accordingly can be effectively reduced, and stability of device performance after doping is improved.