POWER STRUCTURE, PREPARATION METHOD, AND DEVICE

    公开(公告)号:US20220254765A1

    公开(公告)日:2022-08-11

    申请号:US17666911

    申请日:2022-02-08

    Abstract: Embodiments of this application disclose a power structure, a preparation method, and a device, to provide a power structure with a high integration degree, to meet a requirement of the high-frequency and high-power field. The embodiments of this application provide a power structure, including a first substrate, a second substrate, a driver chip, a power chip, and a conductive part. A first surface of the first substrate and a second surface of the second substrate are disposed opposite to each other; a first end of the conductive part is connected to the first surface, and a second end of the conductive part is connected to the second surface; the driver chip is disposed on the first substrate; and the power chip is disposed on the second substrate.

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