公开(公告)号：US20220254765A1

公开(公告)日：2022-08-11

申请号：US17666911

申请日：2022-02-08

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Kai ZHANG ,  Jiahui XU ,  Baiyou CHEN ,  Weiwei YAO

IPC: H01L25/16 ,  H01L23/31 ,  H01L23/538 ,  H01L23/498 ,  H01L23/373

Abstract: Embodiments of this application disclose a power structure, a preparation method, and a device, to provide a power structure with a high integration degree, to meet a requirement of the high-frequency and high-power field. The embodiments of this application provide a power structure, including a first substrate, a second substrate, a driver chip, a power chip, and a conductive part. A first surface of the first substrate and a second surface of the second substrate are disposed opposite to each other; a first end of the conductive part is connected to the first surface, and a second end of the conductive part is connected to the second surface; the driver chip is disposed on the first substrate; and the power chip is disposed on the second substrate.