公开(公告)号：US20250046356A1

公开(公告)日：2025-02-06

申请号：US18921132

申请日：2024-10-21

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Jeffrey Junhao XU ,  Huan YANG ,  Riqing ZHANG

IPC: G11C11/16 ,  H10B61/00 ,  H10N50/80 ,  H10N50/85

Abstract: This application provides a magneto-resistive random access memory, to reduce a chip area. The magneto-resistive random access memory includes: a plurality of stacked stacking layers, where each stacking layer includes a plurality of magnetic memory cells arranged in a two-dimensional manner; and a plurality of selective metal layers, where each stacking layer is disposed between two selective metal layers and is adjacent to the two selective metal layers, and each selective metal layer is connected to a magnetic memory cell in an adjacent stacking layer, and is configured to perform a read/write operation on the magnetic memory cell.

公开(公告)号：US20210390994A1

公开(公告)日：2021-12-16

申请号：US17412904

申请日：2021-08-26

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Jeffrey Junhao XU ,  Huan YANG ,  Riqing ZHANG

IPC: G11C11/16 ,  H01L43/02 ,  H01L27/22 ,  H01L43/10

Abstract: This application provides a magneto-resistive random access memory, to reduce a chip area. The magneto-resistive random access memory includes: a plurality of stacked stacking layers, where each stacking layer includes a plurality of magnetic memory cells arranged in a two-dimensional manner; and a plurality of selective metal layers, where each stacking layer is disposed between two selective metal layers and is adjacent to the two selective metal layers, and each selective metal layer is connected to a magnetic memory cell in an adjacent stacking layer, and is configured to perform a read/write operation on the magnetic memory cell.