公开(公告)号：US20180097081A1

公开(公告)日：2018-04-05

申请号：US15663584

申请日：2017-07-28

Applicant: HRL Laboratories, LLC

Inventor： Yu CAO ,  Rongming CHU ,  Zijian Ray Li

IPC: H01L29/51 ,  H01L29/778 ,  H01L21/28 ,  H01L29/423 ,  H01L29/78

Abstract: A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.

公开(公告)号：US10903333B2

公开(公告)日：2021-01-26

申请号：US15663584

申请日：2017-07-28

Applicant: HRL Laboratories, LLC

Inventor： Yu Cao ,  Rongming Chu ,  Zijian Ray Li

IPC: H01L29/51 ,  H01L29/20 ,  H01L29/778 ,  H01L29/78 ,  H01L29/417 ,  H01L29/43 ,  H01L29/06 ,  H01L21/28 ,  H01L29/423

Abstract: A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.

公开(公告)号：US11437485B2

公开(公告)日：2022-09-06

申请号：US17131518

申请日：2020-12-22

Applicant: HRL Laboratories, LLC

Inventor： Yu Cao ,  Rongming Chu ,  Zijian Ray Li

IPC: H01L21/336 ,  H01L29/51 ,  H01L29/20 ,  H01L29/778 ,  H01L29/78 ,  H01L29/417 ,  H01L29/43 ,  H01L29/06 ,  H01L21/28 ,  H01L29/423

Abstract: A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.