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    ALIGNMENT OF AN OPTICAL COMPONENT
    2.
    发明申请
    ALIGNMENT OF AN OPTICAL COMPONENT 有权
    光学元件的对准

    公开(公告)号：US20170017059A1

    公开(公告)日：2017-01-19

    申请号：US14798941

    申请日：2015-07-14

    Applicant: Honeywell International Inc.

    Inventor： Thomas Ohnstein ,  Bernard S. Fritz ,  Daniel Youngner

    IPC: G02B7/182 ,  G02B5/08

    CPC classification number: G02B7/1822

    Abstract: Methods, apparatuses, and systems for alignment of an optical component are described herein. One method includes forming a pit in a substrate, placing an optical component in the pit, and aligning the optical component such that an edge of the optical component is in physical contact with an alignment edge of the pit.

    Abstract translation: 本文描述了用于对准光学部件的方法，装置和系统。 一种方法包括在基板中形成凹坑，将光学部件放置在凹坑中，以及使光学部件对齐，使得光学部件的边缘与凹坑的对准边缘物理接触。

    Apparatuses, systems, and methods for ion traps
    3.
    发明授权
    Apparatuses, systems, and methods for ion traps 有权

    公开(公告)号：US10950408B2

    公开(公告)日：2021-03-16

    申请号：US16774886

    申请日：2020-01-28

    Applicant: Honeywell International Inc.

    Inventor： Daniel Youngner

    IPC: H01J3/38 ,  H01J9/14 ,  G06N10/00 ,  B82Y10/00 ,  G21K1/00 ,  H01J49/00 ,  H01L29/94

    Abstract: Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

    APPARATUSES, SYSTEMS, AND METHODS FOR ION TRAPS
    4.
    发明申请
    APPARATUSES, SYSTEMS, AND METHODS FOR ION TRAPS 审中-公开

    公开(公告)号：US20200027684A1

    公开(公告)日：2020-01-23

    申请号：US16399568

    申请日：2019-04-30

    Applicant: Honeywell International Inc.

    Inventor： Daniel Youngner

    IPC: H01J3/38 ,  H01J9/14 ,  G06N10/00 ,  B82Y10/00 ,  G21K1/00 ,  H01J49/00

    Abstract: Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

    ION TRAP WITH VARIABLE PITCH ELECTRODES
    6.
    发明申请
    ION TRAP WITH VARIABLE PITCH ELECTRODES 有权
    带可变电极的离子阱

    公开(公告)号：US20160343563A1

    公开(公告)日：2016-11-24

    申请号：US14719587

    申请日：2015-05-22

    Applicant: Honeywell International Inc.

    Inventor： Daniel Youngner

    IPC: H01J49/42

    CPC classification number: H01J49/4255 ,  G21K1/00

    Abstract: Methods, apparatuses, and systems for design, fabrication, and use of an ion trap with variable pitch electrodes are described herein. One apparatus includes an ion trap and a plurality of variable pitch electrodes disposed on the ion trap. A respective electrode of the plurality of electrodes can have a first pitch in a first region of the trap and a second pitch in a second region of the trap.

    Abstract translation: 本文描述了用于设计，制造和使用具有可变节距电极的离子阱的方法，装置和系统。 一种装置包括离子阱和设置在离子阱上的多个可变间距电极。 多个电极中的相应电极可以在陷阱的第一区域中具有第一间距，并且在陷阱的第二区域中可以具有第二间距。

    APPARATUSES, SYSTEMS, AND METHODS FOR ION TRAPS
    7.
    发明申请
    APPARATUSES, SYSTEMS, AND METHODS FOR ION TRAPS 有权
    离子束的设备，系统和方法

    公开(公告)号：US20160322188A1

    公开(公告)日：2016-11-03

    申请号：US14700312

    申请日：2015-04-30

    Applicant: Honeywell International Inc.

    Inventor： Daniel Youngner

    IPC: H01J3/38 ,  H01J9/14

    CPC classification number: H01J3/38 ,  B82Y10/00 ,  G06N99/002 ,  G21K1/00 ,  H01J9/14 ,  H01J49/0018 ,  H01L29/945

    Abstract: Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

    Abstract translation: 本文描述了用于离子阱的装置，系统和方法。 一种装置包括多个微波（MW）导轨和形成有基本上平行的纵向轴线并具有基本上共面的上表面的多个射频（RF）导轨。 该装置包括直流（DC）电极的两个序列，每个序列形成为基本上平行于MW轨道和RF轨道的基本平行的纵向轴线延伸。 该装置还包括通过离子阱的衬底形成的多个穿硅通孔（TSV）和在至少一个TSV周围的衬底中形成的沟槽电容器。

    APPARATUSES, SYSTEMS, AND METHODS FOR ION TRAPS
    8.
    发明申请
    APPARATUSES, SYSTEMS, AND METHODS FOR ION TRAPS 审中-公开

    公开(公告)号：US20200227226A1

    公开(公告)日：2020-07-16

    申请号：US16774886

    申请日：2020-01-28

    Applicant: Honeywell International Inc.

    Inventor： Daniel Youngner

    IPC: H01J3/38 ,  H01J9/14 ,  G06N10/00 ,  B82Y10/00 ,  G21K1/00 ,  H01J49/00

    Abstract: Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

    Ion trap with variable pitch electrodes
    10.
    发明授权
    Ion trap with variable pitch electrodes 有权

    公开(公告)号：US09837258B2

    公开(公告)日：2017-12-05

    申请号：US14719587

    申请日：2015-05-22

    Applicant: Honeywell International Inc.

    Inventor： Daniel Youngner

    IPC: H01J49/42 ,  G21K1/00

    CPC classification number: H01J49/4255 ,  G21K1/00

    Abstract: Methods, apparatuses, and systems for design, fabrication, and use of an ion trap with variable pitch electrodes are described herein. One apparatus includes an ion trap and a plurality of variable pitch electrodes disposed on the ion trap. A respective electrode of the plurality of electrodes can have a first pitch in a first region of the trap and a second pitch in a second region of the trap.

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