公开(公告)号：US20180204735A1

公开(公告)日：2018-07-19

申请号：US15921249

申请日：2018-03-14

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Kazuhiro YUASA ,  Noriaki MICHITA

IPC分类号： H01L21/322 ,  H01L21/324 ,  H01L21/02 ,  H01L21/268 ,  H01L21/67

CPC分类号： H01L21/322 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/2686 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/67757

摘要： There is provide a technique that includes preparing a substrate, in which an insulating film is formed on a pattern having an aspect ratio of 20 or greater and a process target film having a thickness of 200 Å or smaller is formed on the insulating film, in a process chamber; raising a temperature of the substrate to a first temperature with an electromagnetic wave; crystallizing the process target film for a first process time period while maintaining the first temperature; raising the temperature of the substrate to a second temperature, which is higher than the first temperature, with the electromagnetic wave, after the act of crystallizing the process target film; and repairing a crystal defect of the crystallized process target film for a second process time period, which is shorter than the first process time period, while maintaining the second temperature.