公开(公告)号：US20190157179A1

公开(公告)日：2019-05-23

申请号：US16091583

申请日：2017-03-10

Applicant: Hitachi Automotive Systems, Ltd.

Inventor： Shinichi FUJINO ,  Takashi KUBOKI ,  Masaru KAWAI

IPC: H01L23/367 ,  H05K7/20

Abstract: It is possible to improve heat dissipation of a semiconductor circuit to be inserted into a case. A case into which a semiconductor circuit is inserted, the case including: a heat dissipating portion having, on an inner side, a contact surface coming in contact with the semiconductor circuit; a thin portion formed to surround the contact surface and formed to be thinner than the heat dissipating portion; and a recess formed between the thin portion and the heat dissipating portion and recessed with respect to the contact surface, in which an inner surface of the recess is arranged between the contact surface and an inner surface of the thin portion in a thickness direction of the case.

公开(公告)号：US20170313159A1

公开(公告)日：2017-11-02

申请号：US15518303

申请日：2015-10-07

Applicant: Hitachi Automotive Systems, Ltd.

Inventor： Yusuke TAKAGI ,  Takahiro SHIMURA ,  Takashi KUBOKI ,  Akira MATSUSHITA

IPC: B60H1/00 ,  H01L23/473 ,  H01L23/42 ,  H01L23/367 ,  H01L23/492 ,  H02M7/00 ,  H02M7/537

CPC classification number: B60H1/00914 ,  H01L23/3675 ,  H01L23/42 ,  H01L23/473 ,  H01L23/492 ,  H02M7/003 ,  H02M7/537 ,  H05K7/20927

Abstract: The present invention aims to suppress a coolant from bypassing a non-cooling unit without lowering the productivity.The power converter according to the present invention includes: a power semiconductor module; and a flow path forming body having a flow path in which the power semiconductor module is disposed and an opening which is connected with the flow path, wherein the power semiconductor module includes a first fin formed on one surface and a second fin formed on another surface which faces the one surface so as to sandwich the semiconductor element, the flow path forming body has a first coolant control unit and a second coolant control unit which are arranged so as to sandwich the first fin, the first coolant control unit and the second coolant control unit are formed to be overlapped with a region of the power semiconductor module where the first fin is not formed, and a first flow path is formed along the first coolant control unit and the second coolant control unit.

公开(公告)号：US20200258823A1

公开(公告)日：2020-08-13

申请号：US16643065

申请日：2018-07-09

Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.

Inventor： Takashi KUBOKI ,  Keiji KAWAHARA ,  Takeshi KONNO

IPC: H01L23/495 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

Abstract: An object of the invention is to improve productivity while suppressing a reduction in a heat radiating performance of a power semiconductor device.According to the invention, there is provided a manufacturing method of a power semiconductor device which includes a conductive member having a first surface and a second surface provided on a side opposite to the first surface and a power semiconductor element which is connected to the conductive member through a bonding material. The method includes a first procedure in which part of the first surface is pressed to form a concave portion leaving a portion flush with the first surface, and the conductive member is pressed to form a convex portion in the second surface, a second procedure in which the power semiconductor device is disposed in a top of the convex portion to face the concave portion of the first surface and a portion where the concave portion not formed, and the convex portion and the power semiconductor element are connected through the bonding material, and a third procedure in which at least the concave portion is filled with a sealing material.