公开(公告)号：US20200258823A1

公开(公告)日：2020-08-13

申请号：US16643065

申请日：2018-07-09

Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.

Inventor： Takashi KUBOKI ,  Keiji KAWAHARA ,  Takeshi KONNO

IPC: H01L23/495 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

Abstract: An object of the invention is to improve productivity while suppressing a reduction in a heat radiating performance of a power semiconductor device.According to the invention, there is provided a manufacturing method of a power semiconductor device which includes a conductive member having a first surface and a second surface provided on a side opposite to the first surface and a power semiconductor element which is connected to the conductive member through a bonding material. The method includes a first procedure in which part of the first surface is pressed to form a concave portion leaving a portion flush with the first surface, and the conductive member is pressed to form a convex portion in the second surface, a second procedure in which the power semiconductor device is disposed in a top of the convex portion to face the concave portion of the first surface and a portion where the concave portion not formed, and the convex portion and the power semiconductor element are connected through the bonding material, and a third procedure in which at least the concave portion is filled with a sealing material.