公开(公告)号：US20240046417A1

公开(公告)日：2024-02-08

申请号：US18035990

申请日：2021-09-03

Applicant: HITACHI, LTD.

Inventor： Kumiko KONISHI ,  Akio YONEYAMA ,  Hiroyuki OKINO

IPC: G06T5/20 ,  G06T5/00 ,  G06T5/40 ,  G06T5/50 ,  G06T7/00 ,  G06V10/60

CPC classification number: G06T5/20 ,  G06T5/002 ,  G06T5/40 ,  G06T5/50 ,  G06T7/0008 ,  G06V10/60 ,  G06T2207/20221 ,  G06T2207/30148

Abstract: An image processing device for removing a noise having directionality in a first direction from an image containing the noise without affecting information on minute shading of luminance of the image, including: a high-pass filter unit configured to perform filtering processing on an image containing a noise having directionality in a horizontal direction with a high-pass filter in the horizontal direction; a low-pass filter unit configured to perform filtering processing on the image in a vertical direction with a low-pass filter; and an addition unit configured to add an image processed by the high-pass filter unit and an image processed by the low-pass filter unit.

公开(公告)号：US20180047855A1

公开(公告)日：2018-02-15

申请号：US15558130

申请日：2015-05-15

Applicant: HITACHI, LTD.

Inventor： Kan YASUI ,  Hiroyuki MATSUSHIMA ,  Hiroyuki OKINO

IPC: H01L29/872 ,  H01L29/06 ,  H01L25/18 ,  H01L29/16

Abstract: In a Schottky barrier diode comprising silicon carbide: an active region includes a first semiconductor region of a first conductivity type configuring a first Schottky junction having a plurality of linear patterns between a first electrode and the first semiconductor region and a second semiconductor region of a second conductivity type adjacent to the first Schottky junction and connected to the first electrode; at the border of the active region and a periphery region, a second Schottky junction comprising the first electrode and the first semiconductor region and having at least one annular pattern surrounding the linear patterns is provided and the second semiconductor region is adjacent to the second Schottky junction and is connected to the first electrode; and the first and second Schottky junctions are conductive parts and the second semiconductor region is a nonconductive part in a forward bias state.

公开(公告)号：US20160190020A1

公开(公告)日：2016-06-30

申请号：US14911651

申请日：2013-08-14

Applicant: HITACHI, LTD.

Inventor： Yoshinobu KIMURA ,  Natsuki TSUNO ,  Hiroya OHTA ,  Renichi YAMADA ,  Hirotaka HAMAMURA ,  Toshiyuki OHNO ,  Hiroyuki OKINO ,  Yuki MORI

IPC: H01L21/66 ,  G01R31/265

CPC classification number: H01L22/12 ,  G01R31/265 ,  H01L22/20 ,  H01L22/24

Abstract: In a semiconductor inspection method using a semiconductor inspection device, by selecting an incident energy and a negative potential and scanning an inspection surface of a wafer with primary electrons to detect secondary electrons, a first inspection image is acquired, and a macro defect, stacking faults, a basal plane dislocation and a threading dislocation contained in the first inspection image are discriminated by image processing based on a threshold value of a signal amount of the secondary electrons determined in advance. Moreover, by selecting the incident energy and a positive potential and scanning the inspection surface of the wafer with primary electrons to detect the secondary electrons, a second inspection image is acquired, and a threading screw dislocation of a dot-shaped figure contained in the second inspection image is discriminated by image processing based on a threshold value of a signal amount of the secondary electrons determined in advance.

Abstract translation: 在使用半导体检查装置的半导体检查方法中，通过选择入射能量和负电位并扫描具有一次电子的晶片的检查表面以检测二次电子，获得第一检查图像，并且存在宏观缺陷，堆垛层错 通过基于预先确定的二次电子的信号量的阈值的图像处理来判别包含在第一检查图像中的基底位错和穿透位错。 此外，通过选择入射能量和正电位并用一次电子扫描晶片的检查表面以检测二次电子，获得第二检查图像，并且包含在第二电极中的点状图形的螺纹螺钉脱位 基于预先确定的二次电子的信号量的阈值的图像处理来判别检查图像。