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    Wear resistant coating
    5.
    发明授权
    Wear resistant coating 有权

    公开(公告)号：US10676806B2

    公开(公告)日：2020-06-09

    申请号：US15329202

    申请日：2014-07-30

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

    Inventor： James Elmer Abbott, Jr. ,  Greg Scott Long ,  Roberto A. Pugliese

    IPC: C22C45/10 ,  C23C26/00 ,  C22C45/00 ,  C23C30/00 ,  B41J2/14 ,  C09D5/38

    Abstract: A wear resistant coating may comprise an amorphous metal comprising at least one refractory metal, at least two elements selected from periods 4, 5, 6, 9, and 10, and a metalloid. An amorphous metal may comprise at least one refractory metal, at least two elements selected from periods 4, 5, 6, 9, and 10, and a metalloid. A coating may comprise at least one refractory metal, at least two elements selected from periods 4, 5, 6, 9, and 10, and silicon. In some examples, the amorphous metal is TaWSi. In one example, the refractory metals may comprise Niobium, Molybdenum, Tantalum, Tungsten, Rhenium, or combinations thereof.

    Thermal inkjet printhead stack with amorphous thin metal protective layer
    9.
    发明授权
    Thermal inkjet printhead stack with amorphous thin metal protective layer 有权
    热喷墨打印头堆叠与非晶薄金属保护层

    公开(公告)号：US09511585B2

    公开(公告)日：2016-12-06

    申请号：US14787711

    申请日：2013-07-12

    Applicant: Hewlett-Packard Development Company, L.P.

    Inventor： James Elmer Abbott, Jr. ,  Arun K. Agarwal ,  Roberto A. Pugliese ,  Greg Scott Long ,  Stephen Horvath ,  Douglas A. Keszler ,  John Wager ,  Kristopher Olsen ,  John McGlone

    IPC: B41J2/14 ,  B41J2/16

    CPC classification number: B41J2/14112 ,  B41J2/14016 ,  B41J2/14088 ,  B41J2/14129 ,  B41J2/164 ,  B41J2/1646 ,  B41J2/1648 ,  B41J2202/03 ,  B41J2202/11

    Abstract: The present disclosure is drawn to a thermal inkjet printhead stack with an amorphous thin metal protective layer, comprising an insulated substrate, a resistor applied to the insulated substrate, a resistor passivation layer applied to the resistor, and an amorphous thin metal protective layer applied to the resistor passivation layer. The amorphous thin metal protective layer can comprise from 5 atomic % to 90 atomic % of a metalloid of carbon, silicon, or boron. The film can also include a first and second metal, each comprising from 5 atomic % to 90 atomic % of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum. The second metal is different than the first metal, and the metalloid, the first metal, and the second metal account for at least 70 atomic % of the amorphous thin metal protective layer.

    Abstract translation: 本公开涉及具有非晶金属保护层的热喷墨打印头堆叠，其包括绝缘基板，施加到绝缘基板的电阻器，施加到电阻器的电阻器钝化层以及施加到电阻器的非晶薄金属保护层 电阻钝化层。 非晶态金属保护层可以包含5原子％至90原子％的碳，硅或硼准金属。 该膜还可以包括第一和第二金属，每个包含5原子％至90原子％的钛，钒，铬，钴，镍，锆，铌，钼，铑，钯，铪，钽，钨，铱， 或铂金。 第二金属与第一金属不同，并且准金属，第一金属和第二金属占非晶金属保护层的至少70原子％。

    PARTICLE DETECTION VIA RESONANT FREQUENCIES
    10.
    发明公开
    PARTICLE DETECTION VIA RESONANT FREQUENCIES 审中-公开

    公开(公告)号：US20230280262A1

    公开(公告)日：2023-09-07

    申请号：US18023718

    申请日：2020-09-09

    Applicant: Hewlett-Packard Development Company, L.P.

    Inventor： Viktor Shkolnikov ,  Joshua M. Yu ,  Matthew David Smith ,  Roberto A. Pugliese

    IPC: G01N15/14

    CPC classification number: G01N15/1484 ,  G01N15/1429

    Abstract: In one example in accordance with the present disclosure, a particle detection system is described. The particle detection system includes a microfluidic channel through which fluid is to flow. The fluid includes particles. The particle detection system also includes a sensing circuit to output a resonant frequency. The sensing circuit includes a pair of electrodes disposed within the microfluidic channel. Contents of a volume between the pair of electrodes changes a capacitance between the pair of electrodes. A change in the capacitance changes the resonant frequency output by the sensing circuit. The particle detection system also includes a controller to determine the contents of the volume based on the resonant frequency.

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