公开(公告)号：US12163900B2

公开(公告)日：2024-12-10

申请号：US17795570

申请日：2020-11-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masataka Ikesu ,  Ikuo Arata ,  Yoshihiro Ito ,  Toshimichi Ishizuka

IPC: G01N21/95 ,  G01N21/71 ,  G01N21/88

Abstract: The semiconductor failure analysis device includes: a light source configured to generate irradiation light with which the semiconductor device is irradiated; a solid immersion lens disposed on an optical path of the irradiation light; a light detection unit configured to receive reflected light and to output a detection signal according to the reflected light; an optical system 6 disposed between the light source and the solid immersion lens to emit the irradiation light to the semiconductor device via the solid immersion lens and disposed between the solid immersion lens and the light detection unit to emit the reflected light received via the solid immersion lens to the light detection unit. The light source emits the irradiation light having a center wavelength of 880 nm or more and 980 nm or less. The solid immersion lens is formed of GaAs.