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公开(公告)号：US12187607B2
公开(公告)日：2025-01-07
申请号：US17288642
申请日：2019-10-30
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Nao Inoue , Jo Ito , Go Tanaka , Atsuya Iima , Daiki Suzuki , Katsumi Shibayama
Abstract: A method of manufacturing a semiconductor substrate according to an embodiment includes a first step of forming a groove having a bottom surface and a side surface on which scallops are formed by performing a process including isotropic etching on a main surface of a substrate, a second step of performing at least one of a hydrophilic treatment on the side surface of the groove and a degassing treatment on the groove, and a third step of removing the scallops formed on the side surface of the groove and planarizing the side surface by performing anisotropic wet etching in a state where the bottom surface of the recess is present.
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公开(公告)号：US09618323B2
公开(公告)日：2017-04-11
申请号：US14911583
申请日：2014-07-31
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tomofumi Suzuki , Yoshihisa Warashina , Kohei Kasamori , Tatsuya Sugimoto , Jo Ito
CPC classification number: G01B9/02051 , G01J3/0256 , G01J3/4532 , G01J3/4535
Abstract: A method of manufacturing an optical interferometer includes a first step of forming a first semiconductor portion for a beam splitter and a second semiconductor portion for a movable mirror on a main surface of a support substrate and a first insulating layer formed on the main surface, a second step of disposing a first wall portion between a first side surface of the first semiconductor portion and a second side surface in the second semiconductor portion, and a third step of forming a mirror surface in the second semiconductor portion by forming a first metal film on the second side surface using a shadow mask. In the third step, the first side surface is masked by the mask portion and the first wall portion and the first metal film is formed in a state in which the second side portion is exposed from an opening portion.
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