公开(公告)号：US12187607B2

公开(公告)日：2025-01-07

申请号：US17288642

申请日：2019-10-30

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Nao Inoue ,  Jo Ito ,  Go Tanaka ,  Atsuya Iima ,  Daiki Suzuki ,  Katsumi Shibayama

IPC: B81C1/00 ,  B81B7/00

Abstract: A method of manufacturing a semiconductor substrate according to an embodiment includes a first step of forming a groove having a bottom surface and a side surface on which scallops are formed by performing a process including isotropic etching on a main surface of a substrate, a second step of performing at least one of a hydrophilic treatment on the side surface of the groove and a degassing treatment on the groove, and a third step of removing the scallops formed on the side surface of the groove and planarizing the side surface by performing anisotropic wet etching in a state where the bottom surface of the recess is present.