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公开(公告)号：US11483917B2
公开(公告)日：2022-10-25
申请号：US17156376
申请日：2021-01-22
Applicant: Gigaphoton Inc.
Inventor： Atsushi Ueda , Takayuki Osanai , Koichiro Koge
Abstract: A chamber device may include a concentrating mirror, a central gas supply port, an inner wall, an exhaust port, a recessed portion, and a lateral gas supply port. The recessed portion may be on a side lateral to the focal line and recessed outward from the inner wall when viewed from a direction perpendicular to the focal line. The lateral gas supply port is formed at the recessed portion and may supply gas toward gas supplied from the central gas supply port so that a flow direction of the gas supplied from the central gas supply port is bent from a direction along the focal line toward the exhaust port and an internal space of the recessed portion.
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Patent Agency Ranking
2.发明授权公开(公告)号：US11789374B2
公开(公告)日：2023-10-17
申请号：US17397554
申请日：2021-08-09
Applicant: Gigaphoton Inc.
Inventor： Yusuke Hoshino , Yukio Watanabe , Toshihiro Nishisaka , Atsushi Ueda , Koichiro Koge , Takayuki Osanai , Gouta Niimi
CPC classification number: G03F7/70916 , G03F7/70033 , H05G2/006 , H05G2/008
Abstract: An extreme ultraviolet light generation apparatus may include a chamber, a first partition wall covering a plasma generation region in the chamber and having a first opening, an EUV light concentrating mirror located in a first space inside the chamber and outside the first partition wall and configured to concentrate extreme ultraviolet light generated in the plasma generation region and having passed through the first opening, a first gas supply port formed at the chamber and configured to supply gas to the first space, and a gas exhaust port formed in the first partition wall and configured to exhaust gas in a second space inside the first partition wall to outside of both the first partition wall and the chamber.
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公开(公告)号：US11366394B2
公开(公告)日：2022-06-21
申请号：US17492280
申请日：2021-10-01
Applicant: Gigaphoton Inc.
Inventor： Koichiro Koge , Atsushi Ueda , Takayuki Osanai
Abstract: An extreme ultraviolet light generation system may include a chamber, a first partition wall having at least one opening which provides communication between a first space and a second space, an EUV light concentrating mirror located in the second space and configured to concentrate extreme ultraviolet light generated in a plasma generation region located in the first space, a first gas supply port formed at the chamber, and a gas exhaust port formed in the first partition wall, a distance between the center of the plasma generation region and an edge of the at least one opening being equal to or more than a stop distance LSTOP [mm] calculated by the following equation: LSTOP=272.8·EAVG0.4522·P−1 EAVG [eV] representing average kinetic energy of ions generated in the plasma generation region and P [Pa] representing a gas pressure inside the first partition wall.
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4.发明授权公开(公告)号：US11350514B2
公开(公告)日：2022-05-31
申请号：US17160486
申请日：2021-01-28
Applicant: Gigaphoton Inc.
Inventor： Koichiro Koge , Atsushi Ueda , Takayuki Osanai
Abstract: An extreme ultraviolet light generation apparatus includes a chamber device, a concentrating mirror, an exhaust port, and a central gas supply port. The exhaust port is formed at the chamber device and is formed on the side lateral to a focal line and opposite to the reflection surface with respect to the plasma generation region. The central gas supply port is formed on the side opposite to the exhaust port with respect to the plasma generation region on the supply line passing through the exhaust port, the plasma generation region, and an inner side of a peripheral portion of the reflection surface. The central gas supply port supplies the gas toward the exhaust port along the supply line through the plasma generation region.
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5.发明公开公开(公告)号：US20230269857A1
公开(公告)日：2023-08-24
申请号：US18148808
申请日：2022-12-30
Applicant: Gigaphoton Inc.
Inventor： Atsushi UEDA , Koichiro Koge
CPC classification number: H05G2/003 , H05G2/008 , G21K1/06 , G03F7/70033
Abstract: An extreme ultraviolet light generation apparatus includes a chamber; a housing extending from an internal space of the chamber to outside of the chamber, surrounding a plasma generation region except on a trajectory of a droplet target and on an optical path of laser light, and including a first opening through which extreme ultraviolet light generated from the plasma passes; a light concentrating mirror arranged in a first space outside the housing at the internal space and reflecting the extreme ultraviolet light having passed through the first opening in a direction different from an incident direction of the extreme ultraviolet light; and a gas supply port provided in the chamber; and a gas exhaust port provided at the housing outside the chamber. An optical axis of the laser light when being radiated to the droplet target is along a direction in which the gas flows in the plasma generation region.
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公开(公告)号：US11363705B2
公开(公告)日：2022-06-14
申请号：US17156186
申请日：2021-01-22
Applicant: Gigaphoton Inc.
Inventor： Takayuki Osanai , Atsushi Ueda , Koichiro Koge , Akihiro Ohsawa , Toshiya Shintani , Yoshiaki Yoshida , Yuki Ishida , Yosuke Takada
Abstract: An extreme ultraviolet light generation apparatus may include a chamber device, a concentrating mirror, a central gas supply port configured to supply gas along a focal line passing through a first focal point and a second focal point from the center side of the reflection surface, and a first peripheral gas supply port disposed at a peripheral portion of the reflection surface and configured to supply gas in a direction from the outer side of the reflection surface toward the inner side of the reflection surface. The first peripheral gas supply port may supply gas, when viewed along the focal line, in an inclined direction inclined to a tangential direction side of the peripheral portion at the peripheral portion where the first peripheral gas supply port is located with respect to a first straight line passing through the first peripheral gas supply port and the focal line.
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