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    Image sensor having column-level correlated-double-sampling charge transfer amplifier
    1.
    发明授权
    Image sensor having column-level correlated-double-sampling charge transfer amplifier 有权

    公开(公告)号：US12149847B2

    公开(公告)日：2024-11-19

    申请号：US18058722

    申请日：2022-11-23

    Applicant: Gigajot Technology, Inc.

    Inventor： Jiaju Ma ,  Saleh Masoodian

    IPC: H04N25/75 ,  H01L27/146 ,  H04N25/59 ,  H04N25/616 ,  H04N25/65 ,  H04N25/778

    Abstract: Correlated double sampling column-level readout of an image sensor pixel (e.g., a CMOS image sensor) may be provided by a charge transfer amplifier that is configured and operated to itself provide for both correlated-double-sampling and amplification of floating diffusion potentials read out from the pixel onto a column bus after reset of the floating diffusion (i) but before transferring photocharge to the floating diffusion (the reset potential) and (ii) after transferring photocharge to the floating diffusion (the transfer potential). A common capacitor of the charge transfer amplifier may sample both the reset potential and the transfer potential such that a change in potential (and corresponding charge change) on the capacitor represents the difference between the transfer potential and reset potential, and the magnitude of this change is amplified by the charge change being transferred between the common capacitor and a second capacitor selectively coupled to the common capacitor.

    IMAGE SENSOR WITH SWITCHABLE IN-PIXEL BINNING DURING READOUT
    3.
    发明公开
    IMAGE SENSOR WITH SWITCHABLE IN-PIXEL BINNING DURING READOUT 审中-公开

    公开(公告)号：US20240267653A1

    公开(公告)日：2024-08-08

    申请号：US18638493

    申请日：2024-04-17

    Applicant: Gigajot Technology, Inc.

    Inventor： Jiaju Ma ,  Saleh Masoodian

    IPC: H04N25/75 ,  H04N25/57

    CPC classification number: H04N25/75 ,  H04N25/57

    Abstract: First and second readout circuits, each having a respective floating diffusion node, are coupled to a photodetection element within a pixel of an integrated-circuit image sensor. Following an exposure interval in which photocharge is accumulated within the photodetection element, a first portion of the accumulated photocharge is transferred from the photodetection element to the first floating diffusion node to enable generation of a first output signal within the first readout circuit, and a second portion of the accumulated photocharge is transferred from the photodetection element to the second floating diffusion node to enable generation of a second output signal within the second readout circuit. A digital pixel value is generated based on the first and second output signals.

    HIGH-SENSITIVITY DEPTH SENSOR WITH NON-AVALANCHE PHOTODETECTOR
    4.
    发明公开
    HIGH-SENSITIVITY DEPTH SENSOR WITH NON-AVALANCHE PHOTODETECTOR 审中-公开

    公开(公告)号：US20240128301A1

    公开(公告)日：2024-04-18

    申请号：US18542477

    申请日：2023-12-15

    Applicant: Gigajot Technology, Inc.

    Inventor： Saleh Masoodian ,  Jiaju Ma

    IPC: H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/1464

    Abstract: A sensing device includes a light source to emit light, a light sensor to detect reflection of the emitted light and distance determination circuitry responsive to reflected-light detection within the light sensor. The light sensor includes a photodetector having a photocharge storage capacity in excess of one electron and an output circuit that generates an output signal responsive to light detection within the photodetector with sub-hundred nanosecond latency. The distance determination circuitry measures an elapsed time based on transition of the output signal in response to photonic detection within the photodetector and determines, based on the elapsed time, a distance between the sensing device and a surface that yielded the reflection of the emitted light.

    High-sensitivity depth sensor with non-avalanche photodetector
    5.
    发明授权
    High-sensitivity depth sensor with non-avalanche photodetector 有权

    公开(公告)号：US11888013B2

    公开(公告)日：2024-01-30

    申请号：US18052886

    申请日：2022-11-04

    Applicant: Gigajot Technology, Inc.

    Inventor： Saleh Masoodian ,  Jiaju Ma

    IPC: H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/1464 ,  H01L27/14614 ,  H01L27/14616

    Abstract: A sensing device includes a light source to emit light, a light sensor to detect reflection of the emitted light and distance determination circuitry responsive to reflected-light detection within the light sensor. The light sensor includes a photodetector having a photocharge storage capacity in excess of one electron and an output circuit that generates an output signal responsive to light detection within the photodetector with sub-hundred nanosecond latency. The distance determination circuitry measures an elapsed time based on transition of the output signal in response to photonic detection within the photodetector and determines, based on the elapsed time, a distance between the sensing device and a surface that yielded the reflection of the emitted light.

    IMAGE SENSOR HAVING COLUMN-LEVEL CORRELATED-DOUBLE-SAMPLING CHARGE TRANSFER AMPLIFIER
    7.
    发明公开
    IMAGE SENSOR HAVING COLUMN-LEVEL CORRELATED-DOUBLE-SAMPLING CHARGE TRANSFER AMPLIFIER 审中-公开

    公开(公告)号：US20230209223A1

    公开(公告)日：2023-06-29

    申请号：US18058722

    申请日：2022-11-23

    Applicant: Gigajot Technology, Inc.

    Inventor： Jiaju Ma ,  Saleh Masoodian

    IPC: H04N25/75 ,  H01L27/146 ,  H04N25/59 ,  H04N25/65 ,  H04N25/616 ,  H04N25/778

    CPC classification number: H04N25/75 ,  H01L27/14612 ,  H04N25/59 ,  H04N25/65 ,  H04N25/616 ,  H04N25/778

    Abstract: Correlated double sampling column-level readout of an image sensor pixel (e.g., a CMOS image sensor) may be provided by a charge transfer amplifier that is configured and operated to itself provide for both correlated-double-sampling and amplification of floating diffusion potentials read out from the pixel onto a column bus after reset of the floating diffusion (i) but before transferring photocharge to the floating diffusion (the reset potential) and (ii) after transferring photocharge to the floating diffusion (the transfer potential). A common capacitor of the charge transfer amplifier may sample both the reset potential and the transfer potential such that a change in potential (and corresponding charge change) on the capacitor represents the difference between the transfer potential and reset potential, and the magnitude of this change is amplified by the charge change being transferred between the common capacitor and a second capacitor selectively coupled to the common capacitor.

    SCALABLE-PIXEL-SIZE IMAGE SENSOR
    9.
    发明申请
    SCALABLE-PIXEL-SIZE IMAGE SENSOR 有权

    公开(公告)号：US20220102403A1

    公开(公告)日：2022-03-31

    申请号：US17401170

    申请日：2021-08-12

    Applicant: Gigajot Technology, Inc.

    Inventor： Jiaju Ma ,  Michael Guidash

    IPC: H01L27/146 ,  H01L27/148 ,  H04N5/363 ,  H04N5/378

    Abstract: Photodetection elements within an integrated-circuit pixel array are dynamically configurable to any of at least three uniform-aspect-ratio, size-scaled pixel footprints through read-out-time control of in-pixel transfer gates associated with respective photodetection elements and binning transistors coupled between the transfer gates for respective clusters of the photodetection elements and a shared reset node.

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