SPLIT-READOUT IMAGE SENSOR
    1.
    发明公开

    公开(公告)号:US20230239592A1

    公开(公告)日:2023-07-27

    申请号:US18190023

    申请日:2023-03-24

    IPC分类号: H04N25/75 H04N25/57

    CPC分类号: H04N25/75 H04N25/57

    摘要: First and second readout circuits, each having a respective floating diffusion node, are coupled to a photodetection element within a pixel of an integrated-circuit image sensor. Following an exposure interval in which photocharge is accumulated within the photodetection element, a first portion of the accumulated photocharge is transferred from the photodetection element to the first floating diffusion node to enable generation of a first output signal within the first readout circuit, and a second portion of the accumulated photocharge is transferred from the photodetection element to the second floating diffusion node to enable generation of a second output signal within the second readout circuit. A digital pixel value is generated based on the first and second output signals.

    SPLIT-READOUT IMAGE SENSOR
    2.
    发明申请

    公开(公告)号:US20220303487A1

    公开(公告)日:2022-09-22

    申请号:US17716176

    申请日:2022-04-08

    IPC分类号: H04N5/378 H04N5/355

    摘要: First and second readout circuits, each having a respective floating diffusion node, are coupled to a photodetection element within a pixel of an integrated-circuit image sensor. Following an exposure interval in which photocharge is accumulated within the photodetection element, a first portion of the accumulated photocharge is transferred from the photodetection element to the first floating diffusion node to enable generation of a first output signal within the first readout circuit, and a second portion of the accumulated photocharge is transferred from the photodetection element to the second floating diffusion node to enable generation of a second output signal within the second readout circuit. A digital pixel value is generated based on the first and second output signals.

    HIGH-SENSITIVITY DEPTH SENSOR WITH NON-AVALANCHE PHOTODETECTOR

    公开(公告)号:US20200020735A1

    公开(公告)日:2020-01-16

    申请号:US16513653

    申请日:2019-07-16

    IPC分类号: H01L27/146

    摘要: A sensing device includes a light source to emit light, a light sensor to detect reflection of the emitted light and distance determination circuitry responsive to reflected-light detection within the light sensor. The light sensor includes a photodetector having a photocharge storage capacity in excess of one electron and an output circuit that generates an output signal responsive to light detection within the photodetector with sub-hundred nanosecond latency. The distance determination circuitry measures an elapsed time based on transition of the output signal in response to photonic detection within the photodetector and determines, based on the elapsed time, a distance between the sensing device and a surface that yielded the reflection of the emitted light.

    Column-interleaved pixel array
    5.
    发明授权

    公开(公告)号:US11729528B2

    公开(公告)日:2023-08-15

    申请号:US17716320

    申请日:2022-04-08

    IPC分类号: H04N25/75 H04N25/11

    CPC分类号: H04N25/75 H04N25/11

    摘要: Shared-readout pixels conventionally disposed in two or more physical columns of a pixel array are spatially interleaved (merged) within a single physical column to yield a pixel array in which each physical pixel column includes two or more logical columns of shared-readout pixels coupled to respective logical-column output lines.

    HIGH-SENSITIVITY DEPTH SENSOR WITH NON-AVALANCHE PHOTODETECTOR

    公开(公告)号:US20230207602A1

    公开(公告)日:2023-06-29

    申请号:US18052886

    申请日:2022-11-04

    IPC分类号: H01L27/146

    摘要: A sensing device includes a light source to emit light, a light sensor to detect reflection of the emitted light and distance determination circuitry responsive to reflected-light detection within the light sensor. The light sensor includes a photodetector having a photocharge storage capacity in excess of one electron and an output circuit that generates an output signal responsive to light detection within the photodetector with sub-hundred nanosecond latency. The distance determination circuitry measures an elapsed time based on transition of the output signal in response to photonic detection within the photodetector and determines, based on the elapsed time, a distance between the sensing device and a surface that yielded the reflection of the emitted light.

    Column-interleaved pixel array
    7.
    发明授权

    公开(公告)号:US11330220B2

    公开(公告)日:2022-05-10

    申请号:US17006187

    申请日:2020-08-28

    IPC分类号: H04N5/378 H04N9/04

    摘要: Shared-readout pixels conventionally disposed in two or more physical columns of a pixel array are spatially interleaved (merged) within a single physical column to yield a pixel array in which each physical pixel column includes two or more logical columns of shared-readout pixels coupled to respective logical-column output lines.

    COLUMN-INTERLEAVED PIXEL ARRAY
    8.
    发明申请

    公开(公告)号:US20210152767A1

    公开(公告)日:2021-05-20

    申请号:US17006187

    申请日:2020-08-28

    IPC分类号: H04N5/378 H04N9/04

    摘要: Shared-readout pixels conventionally disposed in two or more physical columns of a pixel array are spatially interleaved (merged) within a single physical column to yield a pixel array in which each physical pixel column includes two or more logical columns of shared-readout pixels coupled to respective logical-column output lines.

    SPLIT-READOUT IMAGE SENSOR
    9.
    发明申请

    公开(公告)号:US20200275043A1

    公开(公告)日:2020-08-27

    申请号:US16871720

    申请日:2020-05-11

    IPC分类号: H04N5/378 H04N5/355

    摘要: First and second readout circuits, each having a respective floating diffusion node, are coupled to a photodetection element within a pixel of an integrated-circuit image sensor. Following an exposure interval in which photocharge is accumulated within the photodetection element, a first portion of the accumulated photocharge is transferred from the photodetection element to the first floating diffusion node to enable generation of a first output signal within the first readout circuit, and a second portion of the accumulated photocharge is transferred from the photodetection element to the second floating diffusion node to enable generation of a second output signal within the second readout circuit. A digital pixel value is generated based on the first and second output signals.

    IMAGE SENSOR WITH SWITCHABLE IN-PIXEL BINNING DURING READOUT

    公开(公告)号:US20240267653A1

    公开(公告)日:2024-08-08

    申请号:US18638493

    申请日:2024-04-17

    IPC分类号: H04N25/75 H04N25/57

    CPC分类号: H04N25/75 H04N25/57

    摘要: First and second readout circuits, each having a respective floating diffusion node, are coupled to a photodetection element within a pixel of an integrated-circuit image sensor. Following an exposure interval in which photocharge is accumulated within the photodetection element, a first portion of the accumulated photocharge is transferred from the photodetection element to the first floating diffusion node to enable generation of a first output signal within the first readout circuit, and a second portion of the accumulated photocharge is transferred from the photodetection element to the second floating diffusion node to enable generation of a second output signal within the second readout circuit. A digital pixel value is generated based on the first and second output signals.