摘要:
Composite materials having colloidal photonic crystals patterned in substrates for use in different technologies including lab-on-chip and photonic chip technologies. The colloidal crystals are patterned either on or within surface relief patterns in the substrates of the composite materials and each colloidal crystal exhibits Bragg diffraction.
摘要:
This invention describes methods of synthesis and applications of a composite material of a colloidal crystal and a substrate. The method includes steps of (a) providing a substrate having a surface with a surface relief pattern; and (b) applying a liquid dispersion containing colloidal particles onto the surface and spinning the substrate whereby colloidal particles are swept across the surface and self-assemble in void spaces on the surface defined by the relief pattern. The resulting composite material (substrate with colloidal crystal) may be used in various applications such as chromatography, for use in lab-on-chip based devices, micro-reactors and the like. The material may be infiltrated by a material and the composite inverted to remove the colloidal particles to produce an inverted colloidal crystal pattern on the substrate. The material may be selected such that the inverted colloidal crystal pattern is a photonic crystal.
摘要:
This invention describes methods of synthesis and applications of planarized photonic crystals. Provided are simple, quick, reproducible and inexpensive methods that combine self-assembly and lithography to achieve the first examples of vectorial control of thickness, structure, area, topology, orientation and registry of colloidal crystals that have been patterned in substrates for use in lab-on-chip and photonic chip technologies. 1-, 2 and 3-D colloidal crystals patterned either on or within substrates can be used for templating inverted colloidal crystal replica patterns made of materials like silicon as well as building micron scale structural defects in such colloidal crystals. These photonic crystals can form the basis of a range of optical devices that may be integrated within photonic chips and coupled to optical fibers and/or waveguides to enable development of highly compact planarized optically integrated photonic crystal devices and circuits for use in future all-optical computers and optical telecommunication systems.
摘要:
A display device that includes an underlying excitation source, a converting layer, and an optical filter layer. The underlying excitation source emits light in a spatial pattern that may or may not be altered in time and has a short wavelength capable of being at least partially absorbed by the overlying converting layer. The converting layer can be a contiguous film or pixels of quantum dots that can be dispersed in a matrix material. This converting layer is capable of absorbing at least a portion of the wavelength(s) of the light from the underlying excitation source and emitting light at one or more different wavelengths. The optical filter layer prevents the residual light from the excitation source that was not absorbed by the converting layer from being emitted by the display device.
摘要:
One embodiment of the invention provides a nanostructure layer, comprising: a first population of semiconductor nanocrystals forming electron transport conduits; a second population of semiconductor nanocrystals forming hole transport conduits; and a third population of semiconductor nanocrystals capable of at least one of the following: absorbing light or emitting light.
摘要:
A display device that includes an underlying excitation source, a converting layer, and an optical filter layer. The underlying excitation source emits light in a spatial pattern that may or may not be altered in time and has a short wavelength capable of being at least partially absorbed by the overlying converting layer. The converting layer can be a contiguous film or pixels of quantum dots that can be dispersed in a matrix material. This converting layer is capable of absorbing at least a portion of the wavelength(s) of the light from the underlying excitation source and emitting light at one or more different wavelengths. The optical filter layer prevents the residual light from the excitation source that was not absorbed by the converting layer from being emitted by the display device.
摘要:
One embodiment of the invention provides a nanostructure layer, comprising: a first population of semiconductor nanocrystals forming electron transport conduits; a second population of semiconductor nanocrystals forming hole transport conduits; and a third population of semiconductor nanocrystals capable of at least one of the following: absorbing light or emitting light.
摘要:
A first population of semiconductor nanocrystals to create electron transport conduits, a second population so semiconductor nanocrystals to create hole transport conduits; and a third population of semiconductor nanocrystals to be used for either light absorption or light emission can be combined to form an inorganic nanostructure layer.
摘要:
An EL device is presented which consists of a simple three active layer construction. A layer of a dielectric material, a traditional EL phosphor layer, and a quantum dot layer are present between an electrode and a transparent electrode. The EL device is operated efficiently by an AC source. Quantum dots which emit in the visible spectrum are used. The EL device is fully color tunable by altering the composition and thickness of the layers.
摘要:
The invention provides devices and methods for marking an object using semiconductor nanocrystals. In some embodiments, marking devices according to the invention include semiconductor nanocrystals patterned to form a barcode, the semiconductor nanocrystals being selected from a group consisting of: CdSe, CdS, CdTe, InAs, InSb, InGaSb, InGaN, InGaP, InP, GaP, GaN, HgTe, HgSe, HgS, CnS, ZnSe, ZnS, ZnCdSe, PbS, PbSe, PbTe, CuInGaS2, CuInGaSe2, ZnCuInGaS2, and ZnCuInGaSe2.
摘要翻译:本发明提供了使用半导体纳米晶体来标记物体的装置和方法。 在一些实施例中,根据本发明的标记装置包括图案化以形成条形码的半导体纳米晶体,所述半导体纳米晶体选自CdSe,CdS,CdTe,InAs,InSb,InGaSb,InGaN,InGaP,InP,GaP, GaN,HgTe,HgSe,HgS,CnS,ZnSe,ZnS,ZnCdSe,PbS,PbSe,PbTe,CuInGaS 2,CuInGaSe 2,ZnCuInGaS 2 SUB >和ZnCuInGaSe 2。